scholarly journals Temperature dependent switching behaviour of nickel silicided undoped silicon nanowire devices

2014 ◽  
Vol 11 (11-12) ◽  
pp. 1611-1617 ◽  
Author(s):  
Jürgen Beister ◽  
Andre Wachowiak ◽  
André Heinzig ◽  
Jens Trommer ◽  
Thomas Mikolajick ◽  
...  
2007 ◽  
Vol 28 (12) ◽  
pp. 1129-1131 ◽  
Author(s):  
Keun Hwi Cho ◽  
Sung Dae Suk ◽  
Yun Young Yeoh ◽  
Ming Li ◽  
Kyoung Hwan Yeo ◽  
...  

2021 ◽  
pp. 130451
Author(s):  
Karuna Kumari ◽  
S. Majumder ◽  
Ajay D. Thakur ◽  
S.J. Ray

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
P. Anandan ◽  
N. Malathi ◽  
N. Mohankumar

Silicon nanowires are leading the CMOS era towards the downsizing limit and its nature will be effectively suppress the short channel effects. Accurate modeling of thermal noise in nanowires is crucial for RF applications of nano-CMOS emerging technologies. In this work, a perfect temperature-dependent model for silicon nanowires including the self-heating effects has been derived and its effects on device parameters have been observed. The power spectral density as a function of thermal resistance shows significant improvement as the channel length decreases. The effects of thermal noise including self-heating of the device are explored. Moreover, significant reduction in noise with respect to channel thermal resistance, gate length, and biasing is analyzed.


Author(s):  
T.E. Pratt ◽  
R.W. Vook

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.


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