Temperature-dependent resistive switching behaviour of an oxide memristor

2021 ◽  
pp. 130451
Author(s):  
Karuna Kumari ◽  
S. Majumder ◽  
Ajay D. Thakur ◽  
S.J. Ray
Keyword(s):  
Resistive Switching ◽  
Temperature Dependent ◽  
Switching Behaviour

scholarly journals Reversible resistive switching behaviour in CVD grown, large area MoOx

Nanoscale ◽  
2018 ◽  
Vol 10 (42) ◽  
pp. 19711-19719 ◽  
Author(s):  
Fahmida Rahman ◽  
Taimur Ahmed ◽  
Sumeet Walia ◽  
Edwin Mayes ◽  
Sharath Sriram ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Large Area ◽  
Switching Behaviour

Reversible resistive switching behaviour is observed in MoOx memory devices, at relatively low set/reset voltages, with switching ratios exceeding 103.

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Bottom Electrode ◽  
Low Cost ◽  
Memory Devices ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

scholarly journals Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 736
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Defect Energy ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.

Resistive switching behaviour of a tantalum oxide nanolayer fabricated by plasma oxidation

2013 ◽  
Vol 7 (4) ◽  
pp. 282-284 ◽  
Author(s):  
G. S. Tang ◽  
F. Zeng ◽  
C. Chen ◽  
S. Gao ◽  
H. D. Fu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Tantalum Oxide ◽  
Plasma Oxidation ◽  
Switching Behaviour

The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films

2017 ◽  
Vol 47 (2) ◽  
pp. 1620-1629 ◽  
Author(s):  
Srinu Rowtu ◽  
L. D. Varma Sangani ◽  
M. Ghanashyam Krishna
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Band Gap ◽  
Resistive Switching ◽  
Switching Behaviour ◽  
Znte Thin Films

scholarly journals Localised nanoscale resistive switching in GaP thin films with low power consumption

2017 ◽  
Vol 5 (8) ◽  
pp. 2153-2159 ◽  
Author(s):  
Fran Kurnia ◽  
Chunli Liu ◽  
Guangqing Liu ◽  
Rama K. Vasudevan ◽  
Sang Mo Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Grain Boundaries ◽  
Resistive Switching ◽  
Low Power Consumption ◽  
Conductive Afm ◽  
Switching Mechanism ◽  
Switching Behaviour

Resistive switching behaviour is observed for GaP thin films. Conductive AFM and FORC-IV measurements show that the current is localised at grain boundaries. The switching mechanism is driven by Ga migration along the grain boundaries.

Effect of electrode type in the resistive switching behaviour of TiO2thin films

2012 ◽  
Vol 46 (4) ◽  
pp. 045103 ◽  
Author(s):  
E Hernández-Rodríguez ◽  
A Márquez-Herrera ◽  
E Zaleta-Alejandre ◽  
M Meléndez-Lira ◽  
W de la Cruz ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behaviour

scholarly journals Temperature dependent switching behaviour of nickel silicided undoped silicon nanowire devices

2014 ◽  
Vol 11 (11-12) ◽  
pp. 1611-1617 ◽  
Author(s):  
Jürgen Beister ◽  
Andre Wachowiak ◽  
André Heinzig ◽  
Jens Trommer ◽  
Thomas Mikolajick ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Temperature Dependent ◽  
Switching Behaviour
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