High-power Organic Field-effect Transistors Using a Three-dimensional Structure

2010 ◽  
Vol 1270 ◽  
Author(s):  
M. Uno ◽  
Yuri Hirose ◽  
Kengo Nakayama ◽  
Takafumi Uemura ◽  
Yasuhiro Nakazawa ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Three Dimensional ◽  
Columnar Structure ◽  
Dimensional Structure ◽  
High Current ◽  
Organic Field Effect Transistors ◽  
Switching Speed

AbstractThree-dimensional organic field-effect transistors with multiple sub-micrometer channels are developed to exhibit high current density and high switching speed. The sub-micrometer channels are arranged perpendicularly to substrates and are defined by the height of a multi-columnar structure fabricated without using electron-beam-lithography technique. For devices with dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm2 and fast switching within 200 ns are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.

High Current Density SmTiO3/SrTiO3 Field-Effect Transistors

2020 ◽  
Vol 2 (2) ◽  
pp. 510-516
Author(s):  
Hareesh Chandrasekar ◽  
Kaveh Ahadi ◽  
Towhidur Razzak ◽  
Susanne Stemmer ◽  
Siddharth Rajan
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current

scholarly journals High current density InAsSb/GaSb tunnel field effect transistors

2012 ◽  
Author(s):  
Anil W. Dey ◽  
B. Mattias Borg ◽  
Bahram Ganjipour ◽  
Martin Ek ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current

scholarly journals High Current Density Electrical Breakdown of TiS3Nanoribbon-Based Field-Effect Transistors

2017 ◽  
Vol 27 (13) ◽  
pp. 1605647 ◽  
Author(s):  
Aday J. Molina-Mendoza ◽  
Joshua O. Island ◽  
Wendel S. Paz ◽  
Jose Manuel Clamagirand ◽  
Jose Ramón Ares ◽  
...  
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Breakdown ◽  
High Current Density ◽  
High Current

Three-dimensional porous copper-decorated bismuth-based nanofoam for boosting electrochemical reduction of CO2 to formate

2021 ◽  
Author(s):  
Yingchun Zhang ◽  
Changsheng Cao ◽  
Xintao Wu ◽  
Qi-Long Zhu
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Three Dimensional ◽  
Co2 Reduction ◽  
Reduction Reaction ◽  
High Current ◽  
Porous Copper ◽  
Reduction Of Co2 ◽  
Co2 Reduction Reaction ◽  
Wide Potential

Bismuth (Bi)-based nanomaterials are considered as the promising electrocatalysts for electrocatalytic CO2 reduction reaction (CO2RR), but it is challenging to achieve high current density and selectivity in a wide potential...

High Current, Low Voltage Carbon Nanotube Enabled Vertical Organic Field Effect Transistors

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3467-3472 ◽  
Author(s):  
Mitchell A. McCarthy ◽  
Bo Liu ◽  
Andrew G. Rinzler
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Current ◽  
Organic Field Effect Transistors

High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer

2007 ◽  
Vol 90 (14) ◽  
pp. 142111 ◽  
Author(s):  
Yu-Syuan Lin ◽  
Shun-Hau Koa ◽  
Chih-Yuan Chan ◽  
Shawn S. H. Hsu ◽  
Hong-Mao Lee ◽  
...  
Keyword(s):  
Current Density ◽  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
High Current Density ◽  
High Current ◽  
Effect Transistor

AlGaN/GaN Heterostructure Field-Effect Transistors with Back-Doping Design for High-Power Applications: High Current Density with High Transconductance Characteristics

2002 ◽  
Vol 743 ◽  
Author(s):  
Narihiko Maeda ◽  
Kotaro Tsubaki ◽  
Tadashi Saitoh ◽  
Takehiko Tawara ◽  
Naoki Kobayashi
Keyword(s):  
Barrier Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current ◽  
Algan Barrier ◽  
Heterostructure Field Effect Transistors ◽  
Algan Barrier Layer ◽  
Gan Heterostructure ◽  
High Transconductance

ABSTRACTElectron transport properties and DC device characteristics have been examined in the AlGaN/GaN heterostructure field-effect transistors (HFETs) with back-doping design that makes it possible to obtain high two-dimensional electron gas (2DEG) densities even for the devices with thin AlGaN barrier layers. In the back-doping design, an asymmetric double-heterostructure is employed, and donor atoms are doped not only in the surface-side AlGaN layer but also in the underlying AlGaN layer. In this structure, electrons are efficiently supplied also from the back-doped AlGaN barrier layer to the GaN channel and merged into a single 2DEG layer, with the help of the negative polarization charges at the heterointerface between the GaN channel and the underlying AlGaN barrier layer. By using back-doping design, very high 2DEG densities around 3×1013 cm−2 has been achieved in the Al0.3Ga0.7N/GaN HFET whose barrier layer (Al0.3Ga0.7N) is designed to be as thin as 120 Å. An HFET with the gate-length of 1.5 μm has exhibited a high current density of 1.2 A/mm and a high transconductance of 200 mS/mm, which is ascribed to high 2DEG densities and thin barrier layers in these devices. HFETs with the back-doping design are thus promising for high-power applications.

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