Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density

Hisashi Saito; Yutaka Matsumoto; Yasuyuki Miyamoto; Kazuhito Furuya

doi:10.7567/jjap.50.014102

Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.014102 ◽

2011 ◽

Vol 50 (1R) ◽

pp. 014102 ◽

Cited By ~ 3

Author(s):

Hisashi Saito ◽

Yutaka Matsumoto ◽

Yasuyuki Miyamoto ◽

Kazuhito Furuya

Keyword(s):

Current Density ◽

Field Effect ◽

Field Effect Transistor ◽

High Current Density ◽

High Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.014102 ◽

2011 ◽

Vol 50 ◽

pp. 014102 ◽

Cited By ~ 3

Author(s):

Hisashi Saito ◽

Yutaka Matsumoto ◽

Yasuyuki Miyamoto ◽

Kazuhito Furuya

Keyword(s):

Current Density ◽

Field Effect ◽

Field Effect Transistor ◽

High Current Density ◽

High Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer

Applied Physics Letters ◽

10.1063/1.2719223 ◽

2007 ◽

Vol 90 (14) ◽

pp. 142111 ◽

Cited By ~ 31

Author(s):

Yu-Syuan Lin ◽

Shun-Hau Koa ◽

Chih-Yuan Chan ◽

Shawn S. H. Hsu ◽

Hong-Mao Lee ◽

...

Keyword(s):

Current Density ◽

Dielectric Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

High Current Density ◽

High Current ◽

Effect Transistor

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Fabrication of Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7 MA/cm2

Applied Physics Express ◽

10.1143/apex.3.084101 ◽

2010 ◽

Vol 3 (8) ◽

pp. 084101 ◽

Cited By ~ 12

Author(s):

Hisashi Saito ◽

Yasuyuki Miyamoto ◽

Kazuhito Furuya

Keyword(s):

Current Density ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Insulator ◽

Mesa Structure ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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4H-SiC normally-off vertical junction field-effect transistor with high current density

IEEE Electron Device Letters ◽

10.1109/led.2003.815000 ◽

2003 ◽

Vol 24 (7) ◽

pp. 463-465 ◽

Cited By ~ 52

Author(s):

K. Tone ◽

J.H. Zhao ◽

L. Fursin ◽

P. Alexandrov ◽

M. Weiner

Keyword(s):

Current Density ◽

Field Effect ◽

Field Effect Transistor ◽

High Current Density ◽

High Current ◽

Effect Transistor

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High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.202000576 ◽

2021 ◽

pp. 2000576

Author(s):

Hao Xue ◽

Kamal Hussain ◽

Vishank Talesara ◽

Towhidur Razzak ◽

Mikhail Gaevski ◽

...

Keyword(s):

Current Density ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

High Current Density ◽

High Current ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Density Enhancement

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The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir–Blodgett films of a new asymmetrically substituted phthalocyanine

Thin Solid Films ◽

10.1016/s0040-6090(99)01081-0 ◽

2000 ◽

Vol 360 (1-2) ◽

pp. 256-260 ◽

Cited By ~ 39

Author(s):

Wenping Hu ◽

Yunqi Liu ◽

Yu Xu ◽

Shenggao Liu ◽

Shuqin Zhou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gas Sensitivity ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Langmuir Blodgett ◽

Langmuir Blodgett Films ◽

Effect Transistor

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TCAD simulation of a breakdown-enhanced double channel GaN metal–insulator–semiconductor field-effect transistor with a P-buried layer

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab81b3 ◽

2020 ◽

Vol 35 (6) ◽

pp. 065012

Author(s):

Xin-Xing Fei ◽

Ying Wang ◽

Xin Luo ◽

Meng-Tian Bao ◽

Cheng-Hao Yu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

Tcad Simulation ◽

Double Channel

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Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP

Applied Physics Letters ◽

10.1063/1.93226 ◽

1982 ◽

Vol 40 (8) ◽

pp. 643-645 ◽

Cited By ~ 29

Author(s):

U. Koren ◽

K. L. Yu ◽

T. R. Chen ◽

N. Bar‐Chaim ◽

S. Margalit ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Threshold ◽

Effect Transistor

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A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/12/309 ◽

2001 ◽

Vol 16 (12) ◽

pp. 997-1001 ◽

Cited By ~ 23

Author(s):

Kun-Wei Lin ◽

Chin-Chuan Cheng ◽

Shiou-Ying Cheng ◽

Kuo-Hui Yu ◽

Chih-Kai Wang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Hydrogen Sensor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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Surface state density distribution at an Al2O3‐InP metal‐insulator‐semiconductor field‐effect transistor measured by the charge pumping technique

Applied Physics Letters ◽

10.1063/1.97612 ◽

1986 ◽

Vol 49 (6) ◽

pp. 351-353 ◽

Cited By ~ 5

Author(s):

Takeshi Kobayashi ◽

Tohru Ichikawa ◽

Tetsurou Sawai

Keyword(s):

Density Distribution ◽

Surface State ◽

Field Effect ◽

Field Effect Transistor ◽

State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Charge Pumping ◽

Surface State Density ◽

Effect Transistor

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