scholarly journals Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in MOVPE

2021 ◽  
Author(s):  
Elisa Maddalena Sala ◽  
Max Godsland ◽  
Aristotelis Trapalis ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Droplet Epitaxy ◽  
Inp Quantum Dots

InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy

2020 ◽  
Vol 14 (8) ◽  
pp. 2000173 ◽  
Author(s):  
Elisa Maddalena Sala ◽  
Young In Na ◽  
Max Godsland ◽  
Aristotelis Trapalis ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Droplet Epitaxy ◽  
Inp Quantum Dots

scholarly journals Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 391
Author(s):  
Paweł Holewa ◽  
Jakub Jasiński ◽  
Artem Shikin ◽  
Elizaveta Lebedkina ◽  
Aleksander Maryński ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Block Copolymer ◽  
Theoretical Calculations ◽  
Droplet Epitaxy ◽  
Time Resolved ◽  
Carrier Capture ◽  
Decay Times ◽  
Block Copolymer Lithography ◽  
Inp Quantum Dots ◽  
Copolymer Lithography

The InAs/InP quantum dots (QDs) are investigated by time-integrated (PL) and time-resolved photoluminescence (TRPL) experiments. The QDs are fabricated site-selectively by droplet epitaxy technique using block copolymer lithography. The estimated QDs surface density is ∼1.5 × 1010 cm−2. The PL emission at T=300 K is centered at 1.5 μm. Below T=250 K, the PL spectrum shows a fine structure consisting of emission modes attributed to the multimodal QDs size distribution. Temperature-dependent PL reveals negligible carrier transfer among QDs, suggesting good carrier confinement confirmed by theoretical calculations and the TRPL experiment. The PL intensity quench and related energies imply the presence of carrier losses among InP barrier states before carrier capture by QD states. The TRPL experiment highlighted the role of the carrier reservoir in InP. The elongation of PL rise time with temperature imply inefficient carrier capture from the reservoir to QDs. The TRPL experiment at T=15 K reveals the existence of two PL decay components with strong dispersion across the emission spectrum. The decay times dispersion is attributed to different electron-hole confinement regimes for the studied QDs within their broad distribution affected by the size and chemical content inhomogeneities.

scholarly journals Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer

2021 ◽  
Author(s):  
Dr. Elisa Maddalena Sala ◽  
Max Godsland ◽  
Young In Na ◽  
Aristotelis Trapalis ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Crystallization Process ◽  
Droplet Epitaxy ◽  
Inas Quantum Dots ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
First Time ◽  
Lattice Matched ◽  
Inp Quantum Dots

Abstract InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a Metal Organic Vapor Phase Epitaxy (MOVPE) reactor. Formation of metallic Indium droplets on the In0.53Ga0.47As lattice-matched layer and their crystallization into QDs is demonstrated for the first time in MOVPE. The presence of the In0.53Ga0.47As layer prevents the formation of an unintentional non-stoichiometric 2D layer underneath and around the QDs, via suppression of the As-P exchange. The In0.53Ga0.47As layer affects the surface diffusion leading to a modified droplet crystallization process, where unexpectedly the size of the resulting QDs is found to be inversely proportional to the Indium supply. Bright single dot emission is detected via micro-photoluminescence at low temperature, ranging from 1440 to 1600 nm, covering the technologically relevant telecom C-band. Transmission Electron Microscopy (TEM) investigations reveal buried quantum dots with truncated pyramid shape without defects or dislocations.

Annealing-Induced Structural Evolution of InAs Quantum Dots on InP (111)A Formed by Droplet Epitaxy

2021 ◽  
Author(s):  
Takaaki Mano ◽  
Akihiro Ohtake ◽  
Neul Ha ◽  
Takeshi Noda ◽  
Yoshiki Sakuma ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Evolution ◽  
Droplet Epitaxy ◽  
Inas Quantum Dots

Highly luminescent InP-In(Zn)P/ZnSe/ZnS core/shell/shell colloidal quantum dots with tunable emission synthesized based on growth-doping

2021 ◽  
Author(s):  
Cong Shen ◽  
Yan Qing Zhu ◽  
Zixiao Li ◽  
Jingling Li ◽  
Hong Tao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Infrared Region ◽  
Colloidal Quantum Dots ◽  
High Quality ◽  
Promising Alternative ◽  
Lower Toxicity ◽  
Near Infrared Region ◽  
Inp Quantum Dots ◽  
Tunable Emission

InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...

scholarly journals Imaging Pancreatic Cancer Using Bioconjugated InP Quantum Dots

ACS Nano ◽  
2009 ◽  
Vol 3 (3) ◽  
pp. 502-510 ◽  
Author(s):  
Ken-Tye Yong ◽  
Hong Ding ◽  
Indrajit Roy ◽  
Wing-Cheung Law ◽  
Earl J. Bergey ◽  
...  
Keyword(s):  
Pancreatic Cancer ◽  
Quantum Dots ◽  
Inp Quantum Dots

ELECTRON STRUCTURE INVESTIGATIONS OF InGaP/GaAs(100) HETEROSTRUCTURES WITH InP QUANTUM DOTS

2007 ◽  
Vol 06 (03n04) ◽  
pp. 215-219
Author(s):  
E. P. DOMASHEVSKAYA ◽  
V. A. TEREKHOV ◽  
V. M. KASHKAROV ◽  
S. YU. TURISHCHEV ◽  
S. L. MOLODTSOV ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Emission Spectra ◽  
Luminescence Spectra ◽  
Partial Density ◽  
Edge Structure ◽  
X Ray ◽  
Metal Organic ◽  
Structure Investigations ◽  
First Time ◽  
Inp Quantum Dots

Ultrasoft X-ray emission spectra (USXES) and X-ray absorption near-edge structure (XANES) spectra with the use of synchrotron radiation in the range of P L2,3-edges were obtained for the first time for nanostructures with InP quantum dots grown on GaAs 〈100〉 substrates by vapor-phase epitaxy from metal–organic compounds. These spectra represent local partial density of states in the valence and conduction bands. The additional XANES peak is detected; its intensity depends on the number of monolayers forming quantum dots. Assumptions are made on the band-to-band origin of luminescence spectra in the studied nanostructures.

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