15.3: Asymmetric Conductance of Oxide Thin‐Film Transistors Induced by Top‐Gate Effect of Drain Overlap Capacitance

2019 ◽  
Vol 50 (S1) ◽  
pp. 153-156
Author(s):  
Hongtao Huang ◽  
Qin Zhang ◽  
Chao Dai ◽  
Zhijun Wang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Gate Effect

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Characteristics of Indium Tin Zinc Oxide Thin Film Transistors with Plastic Substrates

2018 ◽  
Vol 28 (4) ◽  
pp. 247-253
Author(s):  
Dae-Gyu Yang ◽  
Hyoung-Do Kim ◽  
Jong-Heon Kim ◽  
Hyun-Suk Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Plastic Substrates

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

2021 ◽  
Vol 42 (3) ◽  
pp. 031101
Author(s):  
Ying Zhu ◽  
Yongli He ◽  
Shanshan Jiang ◽  
Li Zhu ◽  
Chunsheng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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