Analysis of GOI-MOSFET with high-k gate dielectric and metal gate fabricated by Ge condensation technique

2006 ◽  
Vol 38 (12-13) ◽  
pp. 1720-1724 ◽  
Author(s):  
Mungi Park ◽  
Jicheol Bea ◽  
Takafumi Fukushima ◽  
Mitsumasa Koyanagi
2019 ◽  
Vol 11 (4) ◽  
pp. 213-218 ◽  
Author(s):  
Jeong-Hee Ha ◽  
Husam AlShareef ◽  
Jim Chambers ◽  
Yun Sun ◽  
Piero Pianetta ◽  
...  

2019 ◽  
Vol 2 (1) ◽  
pp. 41-48
Author(s):  
Rosa María Luna-Sánchez ◽  
Ignacio González-Martínez

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