Direct-Write Complementary Graphene Field Effect Transistors and Junctions via Near-Field Electrospinning

Small ◽  
2014 ◽  
Vol 10 (10) ◽  
pp. 1920-1925 ◽  
Author(s):  
Jiyoung Chang ◽  
Yumeng Liu ◽  
Kwang Heo ◽  
Byung Yang Lee ◽  
Seung-Wuk Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Near Field ◽  
Direct Write

scholarly journals Field Effect Transistors: Direct-Write Complementary Graphene Field Effect Transistors and Junctions via Near-Field Electrospinning (Small 10/2014)

Small ◽  
2014 ◽  
Vol 10 (10) ◽  
pp. 2112-2112
Author(s):  
Jiyoung Chang ◽  
Yumeng Liu ◽  
Kwang Heo ◽  
Byung Yang Lee ◽  
Seung-Wuk Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Near Field ◽  
Direct Write

scholarly journals Antenna-coupled field-effect transistors as detectors for terahertz near-field microscopy

2021 ◽  
Vol 3 (6) ◽  
pp. 1717-1724
Author(s):  
Matthias M. Wiecha ◽  
Rohit Kapoor ◽  
Alexander V. Chernyadiev ◽  
Kęstutis Ikamas ◽  
Alvydas Lisauskas ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Near Field ◽  
Optical Microscope ◽  
Successful Implementation ◽  
Coupled Field

We report the successful implementation of antenna-coupled terahertz field-effect transistors (TeraFETs) as homodyne detectors in a scattering-type scanning near-field optical microscope (s-SNOM) operating with radiation at 246.5 GHz.

Direct imaging of conductivity in pentacene field-effect transistors by a near-field scanning microwave microprobe

2011 ◽  
Vol 12 (2) ◽  
pp. 263-268 ◽  
Author(s):  
Arsen Babajanyan ◽  
Harutyun Melikyan ◽  
Jongchel Kim ◽  
Kiejin Lee ◽  
Mitsumasa Iwamoto ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Near Field ◽  
Direct Imaging ◽  
Near Field Scanning

The Direct-Write Polymer Field-Effect Transistor

2002 ◽  
Vol 734 ◽  
Author(s):  
M. I. Sluch ◽  
R. M. Taylor ◽  
K. H. Church
Keyword(s):  
Conjugated Polymer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Direct Write ◽  
Direct Writing ◽  
Insulator Layer ◽  
Si Substrates ◽  
Gate Electrodes ◽  
Effect Transistor

ABSTRACTField-effect transistors (FET's) have been directly written onto glass and Si substrates. The FET';s use the regioregular conjugated polymer poly(hexylthiophene) as the active semiconductor, with a formed polyurethane insulator layer and drain, source, and gate electrodes written in Ag. The FET's were fabricated solely by direct writing techniques. The low processing temperatures, the elimination of photolithography, and the flexibility of the direct writing process make this technology especially attractive for low-frequency applications.

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
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