Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface

Small ◽  
2021 ◽  
pp. 2103484
Author(s):  
Fengning Liu ◽  
Jichen Dong ◽  
Na Yeon Kim ◽  
Zonghoon Lee ◽  
Feng Ding
Keyword(s):  
Liquid Copper ◽  
Copper Surface ◽  
Selective Etching

scholarly journals Growth and Selective Etching of Twinned Graphene on Liquid Copper Surface (Small 40/2021)

Small ◽  
2021 ◽  
Vol 17 (40) ◽  
pp. 2170210
Author(s):  
Fengning Liu ◽  
Jichen Dong ◽  
Na Yeon Kim ◽  
Zonghoon Lee ◽  
Feng Ding
Keyword(s):  
Liquid Copper ◽  
Copper Surface ◽  
Selective Etching

scholarly journals Uniform hexagonal graphene flakes and films grown on liquid copper surface

2012 ◽  
Vol 109 (21) ◽  
pp. 7992-7996 ◽  
Author(s):  
D. Geng ◽  
B. Wu ◽  
Y. Guo ◽  
L. Huang ◽  
Y. Xue ◽  
...  
Keyword(s):  
Liquid Copper ◽  
Copper Surface ◽  
Graphene Flakes

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

scholarly journals Improved Copper–Epoxy Adhesion by Laser Micro- and Nano-Structuring of Copper Surface for Thermal Applications

Polymers ◽  
2021 ◽  
Vol 13 (11) ◽  
pp. 1721
Author(s):  
Mario Mora ◽  
Hippolyte Amaveda ◽  
Luis Porta-Velilla ◽  
Germán F. de la Fuente ◽  
Elena Martínez ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Bonding Strength ◽  
Copper Surface ◽  
Heat Sinks ◽  
Electrical Insulation ◽  
Cryogenic Temperatures ◽  
Shear Tests ◽  
Patterned Structures ◽  
Different Temperatures ◽  
Mechanical Tensile

The objective of this work is the enhancement of metal-to-metal bonding to provide high thermal conductivity together with electrical insulation, to be used as heat sinks at room and cryogenic temperatures. High thermal conductive metal (copper) and epoxy resin (Stycast 2850FT) were used in this study, with the latter also providing the required electrical insulation. The copper surface was irradiated with laser to induce micro- and nano-patterned structures that result in an improvement of the adhesion between the epoxy and the copper. Thus, copper-to-copper bonding strength was characterized by means of mechanical tensile shear tests. The effect of the laser processing on the thermal conductivity properties of the Cu/epoxy/Cu joint at different temperatures, from 10 to 300 K, is also reported. Using adequate laser parameters, it is possible to obtain high bonding strength values limited by cohesive epoxy fracture, together with good thermal conductivity at ambient and cryogenic temperatures.

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