Recent Progress in Black-Phosphorus-Based Heterostructures for Device Applications

Small Methods ◽  
2017 ◽  
Vol 2 (2) ◽  
pp. 1700296 ◽  
Author(s):  
Zhibin Yang ◽  
Jianhua Hao
Keyword(s):  
Recent Progress ◽  
Black Phosphorus ◽  
Device Applications

Recent progress in flexible pressure sensor arrays: from design to applications

2018 ◽  
Vol 6 (44) ◽  
pp. 11878-11892 ◽  
Author(s):  
Jing Li ◽  
Rongrong Bao ◽  
Juan Tao ◽  
Yiyao Peng ◽  
Caofeng Pan
Keyword(s):  
Pressure Sensor ◽  
Recent Progress ◽  
Sensor Arrays ◽  
Device Applications ◽  
Flexible Pressure Sensor

This review summarizes the progress in flexible pressure sensor arrays from their fundamental designs to device applications.

Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940012
Author(s):  
Zane Jamal-Eddine ◽  
Yuewei Zhang ◽  
Siddharth Rajan
Keyword(s):  
Tunnel Junction ◽  
Recent Progress ◽  
Tunnel Junctions ◽  
Optoelectronic Devices ◽  
Material System ◽  
Novel Device ◽  
Unique Material ◽  
Material Systems ◽  
Device Applications ◽  
Commercial Device

Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.

Modelling interwall interactions in carbon nanotubes: fundamentals and device applications

2007 ◽  
Vol 365 (1861) ◽  
pp. 2893-2906 ◽  
Author(s):  
Elena Bichoutskaia
Keyword(s):  
Carbon Nanotubes ◽  
Relative Motion ◽  
Recent Progress ◽  
Self Regulation ◽  
Building Blocks ◽  
Great Promise ◽  
Low Friction ◽  
Fundamental Understanding ◽  
Device Applications ◽  
Physical Manipulation

Carbon nanotubes are the most commonly used ‘building blocks’ of modern nanotechnology. Their unique mechanical and electronic properties, stability and functionality show great promise in creating functional devices on the nanometre scale. One of the great challenges in using this scale is the ability of physical manipulation of the components, such as their positioning and assembling. Strong correlation between the structure and mechanical interactions of the walls of carbon nanotubes provides self-regulation of their relative motion. This can be further exploited in low-friction and high-stiffness devices. In this paper, we present a condensed overview of the recent progress in fundamental understanding of nanomechanical and nanoelectromechanical behaviour of carbon nanotubes and their applications in nanodevices.

scholarly journals Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Sung Kim ◽  
Dong Hee Shin ◽  
Dong Yeol Shin ◽  
Chang Oh Kim ◽  
Jae Hee Park ◽  
...  
Keyword(s):  
Recent Progress ◽  
Ion Beam ◽  
Single Layer ◽  
Optoelectronic Device ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
The Past ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Device Applications

During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition ofSiOxsingle layer orSiOx/SiO2multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of SiOxlayers on the luminescence are analyzed in detail and discussed based on possible mechanisms.

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

2021 ◽  
Author(s):  
M. Khalid Hossain ◽  
Mohammad Hafez Ahmed ◽  
Md Ishak Khan ◽  
M. Sazal Miah ◽  
Shahadat Hossain
Keyword(s):  
Rare Earth ◽  
Recent Progress ◽  
Electronic Device ◽  
Rare Earth Oxides ◽  
Device Applications

scholarly journals Chemical vapor transport growth of bulk black phosphorus single crystals

2020 ◽  
Vol 7 (15) ◽  
pp. 2867-2879
Author(s):  
Muhammad Khurram ◽  
Zhaojian Sun ◽  
Ziming Zhang ◽  
Qingfeng Yan
Keyword(s):  
Single Crystal ◽  
Recent Progress ◽  
Reaction System ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Black Phosphorus ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Bulk Single Crystal ◽  
Nucleation And Growth Mechanism

Recent progress in growth of bulk black phosphorus single crystal by CVT method has been briefly reviewed with the emphasis on reaction system, nucleation and growth mechanism as well as advancement in growth of doped BP bulk single crystal.

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