A 2D Model for Interfacial Recombination in Mesoscopic Perovskite Solar Cells with Printed Back Contact

Back-Contact Perovskite Solar Cells

10.29363/nanoge.hopv.2018.202 ◽

2018 ◽

Author(s):

Udo Bach ◽

Xiongfeng Lin

Keyword(s):

Solar Cells ◽

Perovskite Solar Cells ◽

Back Contact

Optimized analysis of back-contact perovskite solar cells architectures

Optik ◽

10.1016/j.ijleo.2020.164362 ◽

2020 ◽

Vol 207 ◽

pp. 164362 ◽

Cited By ~ 2

Author(s):

Guochuan Fang ◽

Hanmin Tian ◽

Weihong Chang ◽

Zheng Wang ◽

Quanmin He ◽

...

Keyword(s):

Solar Cells ◽

Perovskite Solar Cells ◽

Back Contact

Energy Level Engineering of Charge Selective Contact and Halide Perovskite by Modulating Band Offset: Mechanistic Insights

10.26434/chemrxiv.12367505 ◽

2020 ◽

Author(s):

Yassine Raoui ◽

Hamid Ez-Zahraouy ◽

Samrana Kazim ◽

Shahzada Ahmad

Keyword(s):

Solar Cells ◽

Energy Level ◽

Conduction Band ◽

Perovskite Solar Cells ◽

Hole Transport ◽

Conduction Band Minimum ◽

Transport Layer ◽

Hole Transport Layer ◽

Band Offset ◽

Interfacial Recombination

Mixed cation and anion based perovskites solar cells (FAPbI3)0.85(MAPbBr3)0.15 gave enhanced stability under outdoor conditions, however, it yielded limited power conversion efficiency when SnO2 and Spiro-OMeTAD were employed as electron and hole transport layer (ETL/HTL). The inevitable interfacial recombination of charge carriers at ETL/perovskite and perovskite/HTL interface diminished the efficiency in planar (n-i-p) perovskite solar cells. Employing computational approach for uni-dimensional device simulator, the effect of band offset on charge recombination at both interfaces were investigated. We noted that it acquired cliff structure when the conduction band minimum of the ETL is lower than that of the perovskite, and thus maximizes interfacial recombination. However, if the conduction band minimum of ETL is higher than perovskite, i.e. spike structure is formed, which improve the performance of solar cell up to an optimum value of conduction band offset allowing to reach performance of 25.21%, with an open circuit voltage (Voc) of 1231 mV, a current density Jsc of 24.57 mA/cm2 and a fill factor of 83.28%. Additionally, we found that beyond the optimum offset value, large spike structure could decrease the performance. With an optimized, energy level of Spiro-OMeTAD and the thickness of mixed-perovskite layer performance of 26.56 % can be attained. Our results demonstrate a detailed understanding about the energy level tuning between the charge selective layers and perovskite and furthermore how the improvement in PV performance can be achieved by adjusting the energy level offset.

Effect of interfacial recombination, bulk recombination and carrier mobility on the J–V hysteresis behaviors of perovskite solar cells: a drift-diffusion simulation study

Physical Chemistry Chemical Physics ◽

10.1039/c9cp03548f ◽

2019 ◽

Vol 21 (32) ◽

pp. 17836-17845 ◽

Cited By ~ 6

Author(s):

Jin Xiang ◽

Yana Li ◽

Feng Huang ◽

Dingyong Zhong

Keyword(s):

Solar Cells ◽

Hysteresis Loop ◽

Simulation Study ◽

Carrier Mobility ◽

Perovskite Solar Cells ◽

Drift Diffusion ◽

Interfacial Recombination ◽

Diffusion Simulation

A J–V hysteresis loop with a large gap near the VOC (or JSC) region appears by interfacial recombination (or bulk recombination).

The impact of energy alignment and interfacial recombination on the internal and external open-circuit voltage of perovskite solar cells

Energy & Environmental Science ◽

10.1039/c9ee02020a ◽

2019 ◽

Vol 12 (9) ◽

pp. 2778-2788 ◽

Cited By ~ 117

Author(s):

Martin Stolterfoht ◽

Pietro Caprioglio ◽

Christian M. Wolff ◽

José A. Márquez ◽

Joleik Nordmann ◽

...

Keyword(s):

Solar Cells ◽

Charge Transport ◽

Open Circuit Voltage ◽

Perovskite Solar Cells ◽

Open Circuit ◽

Interfacial Recombination ◽

The Impact

We quantify recombination losses in the bulk and interfaces for different perovskite compositions and popular charge transport layers.

Halide Segregation versus Interfacial Recombination in Bromide-Rich Wide-Gap Perovskite Solar Cells

ACS Energy Letters ◽

10.1021/acsenergylett.0c01104 ◽

2020 ◽

Vol 5 (8) ◽

pp. 2728-2736 ◽

Cited By ~ 3

Author(s):

Francisco Peña-Camargo ◽

Pietro Caprioglio ◽

Fengshuo Zu ◽

Emilio Gutierrez-Partida ◽

Christian M. Wolff ◽

...

Keyword(s):

Solar Cells ◽

Perovskite Solar Cells ◽

Wide Gap ◽

Interfacial Recombination

In Situ Back‐Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells

Advanced Materials ◽

10.1002/adma.201807435 ◽

2019 ◽

Vol 31 (14) ◽

pp. 1807435 ◽

Cited By ~ 60

Author(s):

Furui Tan ◽

Hairen Tan ◽

Makhsud I. Saidaminov ◽

Mingyang Wei ◽

Mengxia Liu ◽

...

Keyword(s):

Solar Cells ◽

Fill Factor ◽

Perovskite Solar Cells ◽

Back Contact

Enhanced charge collection with ultrathin AlOxelectron blocking layer for hole-transporting material-free perovskite solar cell

Physical Chemistry Chemical Physics ◽

10.1039/c4cp04902k ◽

2015 ◽

Vol 17 (7) ◽

pp. 4937-4944 ◽

Cited By ~ 34

Author(s):

Huiyun Wei ◽

Jiangjian Shi ◽

Xin Xu ◽

Junyan Xiao ◽

Jianheng Luo ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Perovskite Solar Cells ◽

Perovskite Solar Cell ◽

Charge Collection ◽

Blocking Layer ◽

Back Contact ◽

Hole Transporting ◽

Hole Transporting Material

A MIS back contact was constructed by introducing an ultrathin AlOxlayer to improve the performance of HTM-free perovskite solar cells.

Back-Contact Perovskite Solar Cells

10.32386/scivpro.000005 ◽

2019 ◽

Vol 1 (1) ◽

pp. 1-10 ◽

Cited By ~ 1

Author(s):

Richard H. Friend ◽

Felix Deschler ◽

Luis M. Pazos-Outón ◽

Mojtaba Abdi-Jalebi ◽

Mejd Alsari

Keyword(s):

Solar Cells ◽

Large Scale ◽

Perovskite Solar Cells ◽

Back Contact ◽

Single Junction ◽

Perovskite Materials ◽

Metal Evaporation ◽

Working Mechanisms

Interdigitated back-contact (IBC) architectures are the best performing technology in crystalline Si (c-Si) photovoltaics (PV). Although single junction perovskite solar cells have now surpassed 23% efficiency, most of the research has mainly focussed on planar and mesostructured architectures. The number of studies involving IBC devices is still limited and the proposed architectures are unfeasible for large scale manufacturing. Here we discuss the importance of IBC solar cells as a powerful tool for investigating the fundamental working mechanisms of perovskite materials. We show a detailed fabrication protocol for IBC perovskite devices that does not involve photolithography and metal evaporation. The interview is available at https://youtu.be/nvuNC29TvOY.

Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells

Nanomaterials ◽

10.3390/nano10050872 ◽

2020 ◽

Vol 10 (5) ◽

pp. 872 ◽

Cited By ~ 1

Author(s):

Zahra Rezay Marand ◽

Ahmad Kermanpur ◽

Fathallah Karimzadeh ◽

Eva M. Barea ◽

Ehsan Hassanabadi ◽

...

Keyword(s):

Solar Cells ◽

Low Temperature ◽

Perovskite Solar Cells ◽

Synthesis Temperature ◽

Strong Impact ◽

Perovskite Layer ◽

Co Doping ◽

Beneficial Effects ◽

Hole Transporting ◽

Interfacial Recombination

Inorganic hole-transporting materials (HTMs) for stable and cheap inverted perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature, has been employed. However, the low conductivity and the large number of defects limit the boost of the efficiency. An approach to improve the conductivity is metal doping. In this work, we have synthesized cobalt-doped NiOx nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions to be used for the inverted planar perovskite solar cells. The best efficiency of the devices utilizing the low temperature-deposited Co-doped NiOx HTM obtained a champion photoconversion efficiency of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not from an increase of the conductivity of the NiOx film, but due to the improvement of the perovskite layer morphology. We observe that the Co-doping raises the interfacial recombination of the device but more importantly improves the perovskite morphology, enlarging grain size and reducing the density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the beneficial effects do not just compensate for the deleterious one but increase performance further. Therefore, 0.75 mol% Co doping results in a significant improvement in the performance of NiOx-based inverted planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the inorganic material at low temperature, without losing the performance, due to the strong impact on the structural properties of the perovskite. This work highlights the importance of the interface from two different points of view, electrical and structural, recognizing the role of a low doping Co concentration, as a key to improve the inverted perovskite-based solar cells’ performance.