Microstrip stabilized semiconductor asymmetrical quantum well structure generator for millimeter and submillimeter wavelength range

1997 ◽  
Vol 22 (1) ◽  
pp. 19-23 ◽  
Author(s):  
A.A. Beloushkin ◽  
A.S. Ignatyev ◽  
A.L. Karuzskii ◽  
V.N. Murzin ◽  
A.V. Perestoronin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Submillimeter Wavelength ◽  
Quantum Well Structure ◽  
Structure Generator

Microstrip-stabilized semiconductor quantum-well generator for millimeter and submillimeter wavelength range

1996 ◽  
Author(s):  
Alexandr L. Karuzskii ◽  
V. A. Dravin ◽  
A. S. Ignatyev ◽  
A. E. Krapivka ◽  
Yu. A. Mityagin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Submillimeter Wavelength ◽  
Semiconductor Quantum Well

Improvement of the Lifetime of a GaAs-Based Laser on Si with a Strained Quantum-Well Structure.

1994 ◽  
Vol 22 (12) ◽  
pp. 977-984
Author(s):  
Yoshiaki HASEGAWA ◽  
Takashi EGAWA ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Quantum Well ◽  
Quantum Well Structure ◽  
Strained Quantum Well

Modulation-doped (AlGa)As/GaAs quantum well structure with high electron sheet density

1989 ◽  
Vol 25 (17) ◽  
pp. 1147
Author(s):  
A.L. Powell ◽  
J.S. Roberts ◽  
P.I. Rockett ◽  
T.J. Foster ◽  
L. Eaves
Keyword(s):  
Quantum Well ◽  
High Electron ◽  
Quantum Well Structure ◽  
Electron Sheet ◽  
Sheet Density

High-Quality GaAsxP1-x/In0.13Ga0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations

1999 ◽  
Vol 38 (Part 1, No. 12A) ◽  
pp. 6645-6649 ◽  
Author(s):  
Yasuhiro Fujimoto ◽  
Hiroo Yonezu ◽  
Satoshi Irino ◽  
Katsuya Samonji ◽  
Kenji Momose ◽  
...  
Keyword(s):  
Quantum Well ◽  
Threading Dislocations ◽  
Si Substrate ◽  
High Quality ◽  
Quantum Well Structure

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure

2000 ◽  
Vol 29 (11) ◽  
pp. 1346-1350 ◽  
Author(s):  
L. Malikova ◽  
Fred H. Pollak ◽  
Oleg Gorea ◽  
Alexander Korotcov
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Spectroscopy Study ◽  
Modulation Spectroscopy ◽  
Strained Layer ◽  
Quantum Well Structure

In-plane magnetic-field effect on transport properties of the chiral edge state in a quasi-three-dimensional quantum well structure

1999 ◽  
Vol 60 (12) ◽  
pp. 8743-8747 ◽  
Author(s):  
B. Zhang ◽  
J. Brooks ◽  
Z. Wang ◽  
J. Simmons ◽  
J. Reno ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Transport Properties ◽  
Field Effect ◽  
Three Dimensional ◽  
Magnetic Field Effect ◽  
Edge State ◽  
Quantum Well Structure
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