Multiple-Person Tracking Using a Plan-View Map with Error Estimation

2006 ◽  
pp. 359-368 ◽  
Author(s):  
Kentaro Hayashi ◽  
Takahide Hirai ◽  
Kazuhiko Sumi ◽  
Koichi Sasakawa
Keyword(s):  
Error Estimation ◽  
Plan View ◽  
Person Tracking

In situ observations of electromigration induced void behavior

1995 ◽  
Vol 53 ◽  
pp. 244-245
Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden
Keyword(s):  
Electron Microscopy ◽  
Void Nucleation ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Microelectronics Industry ◽  
In Situ Observations ◽  
Backscatter Electron Detector ◽  
Voltage Scanning

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].

HREM image simulations for supported metal particle catalysts

1993 ◽  
Vol 51 ◽  
pp. 736-737 ◽  
Author(s):  
Ming-Hui Yao ◽  
David J. Smith
Keyword(s):  
Fine Particles ◽  
Amorphous Material ◽  
Chemical Properties ◽  
Morphological Features ◽  
Metal Particles ◽  
Plan View ◽  
Profile View ◽  
Imaging Conditions ◽  
Image Simulations ◽  
Supported Metal

The chemical properties of catalysts often depend on the size, shape and structure of the supported metal particles. To characterize these morphological features and relate them to catalysis is one of the main objectives for HREM study of catalysts. However, in plan view imaging, details of the shape and structure of ultra-fine supported particles (<2nm) are often obscured by the overlapping contrast from the support, and supported sub-nanometer particles are sometimes even invisible. Image simulations may help in the interpretation at HREM images of supported particles in particular to extract useful information about the size, shape and structure of the particles. It should also be a useful tool for evaluating the imaging conditions in terms of visibility of supported particles. P. L. Gai et al have studied contrast from metal particles supported on amorphous material using multislice simulations. In order to better understand the influence of a crystalline support on the visibility and apparent morphological features of supported fine particles, we have calculated images of Pt and Re particles supported on TiO2(rutile) in both plan view and profile view.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

HOT CORROSION OF CERIA-YTTRIA STABILIZED ZIRCONIA PLASMA SPRAYED THERMAL BARRIER COATING BY EUTECTIC VANDIUM PENTAOXIDE-SODIUM SULFATE

2018 ◽  
Vol 18 (1) ◽  
pp. 182-192 ◽  
Author(s):  
Mohammed J Kadhim ◽  
Mohammed H Hafiz ◽  
Maryam A Ali Bash
Keyword(s):  
Thermal Barrier Coating ◽  
Hot Corrosion ◽  
Monoclinic Phase ◽  
Volume Fraction ◽  
High Volume ◽  
Thermal Barrier ◽  
Air Plasma ◽  
Plan View ◽  
Barrier Coating ◽  
Plasma Sprayed

The high temperature corrosion behavior of thermal barrier coating (TBC) systemconsisting of IN-738 LC superalloy substrate, air plasma sprayed Ni24.5Cr6Al0.4Y (wt%)bond coat and air plasma sprayed ZrO2-20 wt% ceria-3.6 wt% yttria (CYSZ) ceramic coatwere characterized. The upper surfaces of CYSZ covered with 30 mg/cm2 , mixed 45 wt%Na2SO4-55 wt% V2O5 salt were exposed at different temperatures from 800 to 1000 oC andinteraction times from 1 up to 8 h. The upper surface plan view of the coatings wereidentified for topography, roughness, chemical composition, phases and reaction productsusing scanning electron microscopy, energy dispersive spectroscopy, talysurf, and X-raydiffraction. XRD analyses of the plasma sprayed coatings after hot corrosion confirmed thephase transformation of nontransformable tetragonal (t') into monoclinic phase, presence ofYVO4 and CeVO4 products. Analysis of the hot corrosion CYSZ coating confirmed theformation of high volume fraction of YVO4, with low volume fractions of CeOV4 and CeO2.The formation of these compounds were combined with formation of monoclinic phase (m)from transformation of nontransformable tetragonal phase (t').

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

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