Organic Chemical Characterization of Water of the Northwestern Algerian Dams

Author(s):  
Fatiha Hadji ◽  
Imen Guasmi ◽  
Chahrazed Aggab
2020 ◽  
Vol 262 ◽  
pp. 114360 ◽  
Author(s):  
Pelin Ertürk Ari ◽  
Akif Ari ◽  
Yetkin Dumanoğlu ◽  
Mustafa Odabasi ◽  
Eftade O. Gaga

2000 ◽  
Vol 6 (S2) ◽  
pp. 122-123
Author(s):  
M. Catalano ◽  
P. Crozier ◽  
A. Taurino ◽  
A. Passaseo ◽  
R. Cingolani

The improvement of growth techniques in the characterization of semiconductor nanostructures, has recently resulted in the realization of quasi-zero dimensional semi-conducting devices (quantum dots) of excellent performances and of reproducible quality (1,2). The design and fabrication of these devices strongly depends on the ability to control parameters that influence the quantum confinement namely the shape, dimension and size distribution of the dots. High spatial resolution structural and analytical techniques are crucial to obtain nanoscale information about the shape of the dots, the structural and chemical abruptness of the interfaces, and the composition of the dots (3).In this paper we show the results of a structural and chemical characterization of In0.5Ga0.5As/GaAs quantum dots grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on a (100) GaAs substrate. The growth was performed in a horizontal LP-MOCVD system (AIXTRON 200 AIX).


2013 ◽  
Vol 44 (22) ◽  
pp. 3310-3316 ◽  
Author(s):  
Jari Liski ◽  
Anna Repo ◽  
Mikko Tuomi ◽  
Pekka Vanhala

Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).


1981 ◽  
Author(s):  
Birgitta Berglund ◽  
Ulf Berglund ◽  
Thomas Lindvall ◽  
Helene Nicander-Bredberg

1973 ◽  
Vol 74 (2) ◽  
pp. 226-236 ◽  
Author(s):  
Michel Chrétien ◽  
Claude Gilardeau

ABSTRACT A protein isolated from ovine pituitary glands has been purified, and its homogeneity assessed by NH2- and COOH-terminal amino acid determination, ultracentrifugation studies, and polyacrylamide gel electrophoresis after carboxymethylation. Its chemical and immunochemical properties are closely similar to those of beef and pork neurophysins, less similar to those of human neurophysins. It contains no tryptophan (like other neurophysins) or histidine (like all except bovine neurophysin-I and human neurophysins). It has alanine at the NH2-terminus and valine at the COOH-terminus. Its amino acid composition is similar to, but not identical with those of porcine and bovine neurophysins.


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