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Device Simulation of SWNT-FETs
Integrated Circuits and Systems - Carbon Nanotube Electronics
◽
10.1007/978-0-387-69285-2_5
◽
2008
◽
pp. 107-131
◽
Cited By ~ 12
Author(s):
Jing Guo
◽
Mark Lundstrom
Keyword(s):
Device Simulation
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A tin-based perovskite solar cell with an inverted hole-free transport layer to achieve high energy conversion efficiency by SCAPS device simulation
Optical and Quantum Electronics
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10.1007/s11082-021-03175-5
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2021
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Vol 53
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Author(s):
Liangsheng Hao
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Tong Li
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Xinxia Ma
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Jiang Wu
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...
Keyword(s):
Solar Cell
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Energy Conversion
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Conversion Efficiency
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Device Simulation
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Energy Conversion Efficiency
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High Energy
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Perovskite Solar Cell
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Transport Layer
◽
High Energy Conversion Efficiency
◽
Free Transport
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Machine Learning Based Device Simulation Using Multi-variable Non-linear Regression to Assess the Impact of Device Parameter Variability on Threshold Voltage of Double Gate-All-Around (DGAA) MOSFET
2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)
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10.1109/iccs51219.2020.9336608
◽
2020
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Author(s):
Sandeep Moparthi
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Chandan Yadav
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Gopi Krishna Saramekala
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Pramod Kumar Tiwari
Keyword(s):
Machine Learning
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Linear Regression
◽
Threshold Voltage
◽
Device Simulation
◽
Double Gate
◽
Device Parameter
◽
Non Linear
◽
The Impact
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Soft Error Tolerance of Standard and Stacked Latches Dependending on Substrate Bias in a FDSOI Process Evaluated by Device Simulation
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
◽
10.1109/s3s46989.2019.9320705
◽
2019
◽
Author(s):
Kentaro Kojima
◽
Jun Furuta
◽
Kazutoshi Kobayashi
Keyword(s):
Device Simulation
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Soft Error
◽
Error Tolerance
◽
Substrate Bias
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Device Simulation of Poly (3-Hexylthiophene) HTL Based Single and Double Halide Perovskite Solar Cells
2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
◽
10.1109/pvsc45281.2020.9300485
◽
2020
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Author(s):
Sakshi Sharma
◽
Shivani Gohri
◽
Rahul Pandey
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Jaya Madan
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Rajnish Sharma
Keyword(s):
Solar Cells
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Perovskite Solar Cells
◽
Device Simulation
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Halide Perovskite
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Device simulation of low cost HTM free perovskite solar cell based on TiO2 electron transport layer
10.1063/5.0001230
◽
2020
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Author(s):
Shambhavi Rai
◽
B. K. Pandey
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D. K. Dwivedi
Keyword(s):
Solar Cell
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Electron Transport
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Low Cost
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Device Simulation
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Perovskite Solar Cell
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Transport Layer
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Electron Transport Layer
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Gridding techniques for the level set method in semiconductor process and device simulation
SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest
◽
10.1109/sispad.1997.621404
◽
2002
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Author(s):
E.C. Kan
◽
Ze-Kai Hsiau
◽
V. Rao
◽
R.W. Dutton
Keyword(s):
Level Set Method
◽
Level Set
◽
Device Simulation
◽
Semiconductor Process
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Analysis of USJ Formation with Combined RTA/Laser Annealing Conditions for 28nm High-K/Metal Gate CMOS Technology Using Advanced TCAD for Process and Device Simulation
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)
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10.1109/istdm.2012.6222439
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2012
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Cited By ~ 1
Author(s):
E. M. Bazizi
◽
S. M. Pandey
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C. Wang
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I. Jiang
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S. Chu
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...
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Laser Annealing
◽
Device Simulation
◽
Cmos Technology
◽
Metal Gate
◽
Annealing Conditions
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High K
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A Global Self-Heating Model for Device Simulation
30th European Solid-State Device Research Conference
◽
10.1109/essderc.2000.194780
◽
2000
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Cited By ~ 1
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T. Grasser
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R. Quay
◽
V. Palankovski
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S. Selberherr
Keyword(s):
Device Simulation
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Self Heating
◽
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Electronic Device Simulation
Integrated Photonics Research
◽
10.1364/ipr.1992.md1
◽
1992
◽
Author(s):
A. Drobot
Keyword(s):
Electronic Device
◽
Device Simulation
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Device simulation of a novel strained silicon channel RF LDMOS
Microelectronic Engineering
◽
10.1016/j.mee.2011.12.014
◽
2012
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Vol 94
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pp. 29-32
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Cited By ~ 4
Author(s):
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M.A. Malakootian
Keyword(s):
Device Simulation
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Strained Silicon
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