Analog/RF Design Concepts for High-Power Silicon Based mmWave and THz Applications

2008 ◽  
pp. 283-301
Author(s):  
Ullrich R. Pfeiffer
Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1646
Author(s):  
Jingya Xie ◽  
Wangcheng Ye ◽  
Linjie Zhou ◽  
Xuguang Guo ◽  
Xiaofei Zang ◽  
...  

In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.


Author(s):  
Ming-Ji Dai ◽  
Chih-Kuang Yu ◽  
Chun Kai Liu ◽  
Sheng-Liang Kuo

A new thermal management application of silicon-based thermoelectric (TE) cooler integrated with high power light emitting diode (LED) is investigated in present study. The silicon-based TE cooler herein is fabricated by MEMS fabrication technology and flip-chip assembly process that is used for high power LED cooling. An electrical-thermal conversion method is used to estimate the junction temperature of LED. Moreover, the Integrating Sphere is also used to measure the light efficiency of LED. The thermal images photographed by infrared camera demonstrated the cooling function of the silicon-based TE devices. The results also show that high power LED integrated with silicon-based thermoelectric cooler package can effectively reduce the thermal resistance to zero. In addition, the light efficiency of the LED (1W) will increase under low TE cooler input power (0.55W), which is about 1.3 times of that without TE cooler packaging.


2015 ◽  
Vol 96-97 ◽  
pp. 498-502 ◽  
Author(s):  
Hae Jin Kim ◽  
Son Jong Wang ◽  
Byoung Ho Park ◽  
Jong-Gu Kwak ◽  
Julien Hillairet ◽  
...  

2007 ◽  
Vol 133 (1-3) ◽  
pp. 157-163 ◽  
Author(s):  
Oh Joong Kwon ◽  
Sun-Mi Hwang ◽  
In Kyu Song ◽  
Ho-In Lee ◽  
Jae Jeong Kim
Keyword(s):  

2020 ◽  
Vol 19 (5) ◽  
pp. 379-383
Author(s):  
Yanghua Gao ◽  
Weidong Lou ◽  
Hailiang Lu

In the terahertz (THz) band, conventional metallic antennas are virtually infeasible, due to the low mobility of electrons and huge attenuation. The existing metallic THz antennas need a high power to overcome scattering losses, and tend to have a low antenna efficiency. Fortunately, graphene is an excellent choice of miniaturized antenna in millimeter/THz applications, thanks to its unique electronic properties in THz band. Therefore, this paper presents two miniaturized reconfigurable graphene antennas, and characterizes their performance in terms of frequency reconfiguration, omnidirectional radiation pattern, and radiation efficiency. The proposed graphene antennas were printed on a quartz substrate, and simulated on CST Microwave Studio. The results show that the excellence of the proposed antennas in reflection coefficient, dynamic frequency reconfiguration (DFR), and omnidirectional radiation pattern. The operation frequency of the two antennas varies from 0.74 to 1.26 THz and from 0.92 to 1.15 THz, respectively. The proposed antennas have great prospects in wireless communications/sensors.


2020 ◽  
Vol 56 (2) ◽  
pp. 1-11
Author(s):  
Peiqi Zhou ◽  
Xingjun Wang ◽  
Yandong He ◽  
Weiwen Zou

Author(s):  
Saeed Zeinolabedinzadeh ◽  
Patrick Goley ◽  
Milad Frounchi ◽  
Sunil Rao ◽  
Christian G. Bottenfield ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document