Precision Resistivity Measurements on NTD-Silicon

1981 ◽  
pp. 395-415
Author(s):  
O. Malmros
Keyword(s):  
Resistivity Measurements

Direct Observation of the Diffusionless β → β + ω Transformation in Titanium Alloys

1971 ◽  
Vol 29 ◽  
pp. 122-123
Author(s):  
N. E. Paton ◽  
D. de Fontaine ◽  
J. C. Williams
Keyword(s):  
Electron Microscope ◽  
Titanium Alloys ◽  
Direct Observation ◽  
Dark Field ◽  
X Ray Diffraction ◽  
Resistivity Measurements ◽  
Selected Area Electron Diffraction ◽  
Ti Alloys ◽  
Thin Foils ◽  
Field Device

The electron microscope has been used to study the diffusionless β → β + ω transformation occurring in certain titanium alloys at low temperatures. Evidence for such a transformation was obtained by Cometto et al by means of x-ray diffraction and resistivity measurements on a Ti-Nb alloy. The present work shows that this type of transformation can occur in several Ti alloys of suitable composition, and some of the details of the transformation are elucidated by means of direct observation in the electron microscope.Thin foils were examined in a Philips EM-300 electron microscope equipped with a uniaxial tilt, liquid nitrogen cooled, cold stage and a high resolution dark field device. Selected area electron diffraction was used to identify the phases present and the ω-phase was imaged in dark field by using a (101)ω reflection. Alloys were water quenched from 950°C, thinned, and mounted between copper grids to minimize temperature gradients in the foil.

In-situ electrical-resistivity measurements in the high-voltage electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 68-69
Author(s):  
W. E. King
Keyword(s):  
Electrical Resistivity ◽  
Electron Microscope ◽  
High Voltage ◽  
Resistivity Measurements ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Wide Range ◽  
Helium Gas

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).

Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

2018 ◽  
Vol 1 (1) ◽  
pp. 21-25
Author(s):  
R Revathi ◽  
R Karunathan
Keyword(s):  
Thin Films ◽  
Negative Temperature Coefficient ◽  
Thermal Evaporation ◽  
Structural Parameters ◽  
Negative Temperature ◽  
Resistivity Measurements ◽  
Allowed Transition ◽  
Evaporation Technique ◽  
Indium Telluride ◽  
Made In

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

2D Reservoir Imaging Using Deep Directional Resistivity Measurements

2018 ◽  
Vol 59 (2) ◽  
pp. 218-233 ◽  
Author(s):  
Michael Thiel ◽  
◽  
Michael Bower ◽  
Dzevat Omeragic ◽  
Keyword(s):  
Resistivity Measurements

scholarly journals Electrical Resistivity Measurements and Soundings on Glaciers: Introductory Remarks

1967 ◽  
Vol 6 (47) ◽  
pp. 599-606 ◽  
Author(s):  
Hans Röthlisberger
Keyword(s):  
Electrical Resistivity ◽  
Resistivity Measurements ◽  
Resistivity Method

A brief description of the resistivity method is given, stressing the points which are of particular importance when working on glaciers. The literature is briefly reviewed.

scholarly journals Old Donors for New Molecular Conductors: Combining TMTSF and BEDT-TTF with Anionic (TaF6)1−x/(PF6)x Alloys

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 386
Author(s):  
Magali Allain ◽  
Cécile Mézière ◽  
Pascale Auban-Senzier ◽  
Narcis Avarvari
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Density Wave ◽  
Spin Density Wave ◽  
Orthorhombic Phase ◽  
Molecular Conductors ◽  
Bechgaard Salts ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Resistivity Measurements

Tetramethyl-tetraselenafulvalene (TMTSF) and bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) are flagship precursors in the field of molecular (super)conductors. The electrocrystallization of these donors in the presence of (n-Bu4N)TaF6 or mixtures of (n-Bu4N)TaF6 and (n-Bu4N)PF6 provided Bechgaard salts formulated as (TMTSF)2(TaF6)0.84(PF6)0.16, (TMTSF)2(TaF6)0.56(PF6)0.44, (TMTSF)2(TaF6)0.44(PF6)0.56 and (TMTSF)2(TaF6)0.12(PF6)0.88, together with the monoclinic and orthorhombic phases δm-(BEDT-TTF)2(TaF6)0.94(PF6)0.06 and δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57, respectively. The use of BEDT-TTF and a mixture of (n-Bu4N)TaF6/TaF5 afforded the 1:1 phase (BEDT-TTF)2(TaF6)2·CH2Cl2. The precise Ta/P ratio in the alloys has been determined by an accurate single crystal X-ray data analysis and was corroborated with solution 19F NMR measurements. In the previously unknown crystalline phase (BEDT-TTF)2(TaF6)2·CH2Cl2 the donors organize in dimers interacting laterally yet no organic-inorganic segregation is observed. Single crystal resistivity measurements on the TMTSF based materials show typical behavior of the Bechgaard phases with room temperature conductivity σ ≈ 100 S/cm and localization below 12 K indicative of a spin density wave transition. The orthorhombic phase δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57 is semiconducting with the room temperature conductivity estimated to be σ ≈ 0.16–0.5 S/cm while the compound (BEDT-TTF)2(TaF6)2·CH2Cl2 is also a semiconductor, yet with a much lower room temperature conductivity value of 0.001 to 0.0025 S/cm, in agreement with the +1 oxidation state and strong dimerization of the donors.

The activation energy U(T,B) in high temperature superconductor

2020 ◽  
Vol 92 (2) ◽  
pp. 20601
Author(s):  
Abdelaziz Labrag ◽  
Mustapha Bghour ◽  
Ahmed Abou El Hassan ◽  
Habiba El Hamidi ◽  
Ahmed Taoufik ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Activation Energy ◽  
Phase Diagram ◽  
High Temperature ◽  
Apparent Activation Energy ◽  
High Temperature Superconductor ◽  
Flux Flow ◽  
Resistivity Measurements ◽  
Vortex Phase ◽  
The Magnetic Field

It is reported in this paper on the thermally assisted flux flow in epitaxial YBa2Cu3O7-δ deposited by Laser ablation method on the SrTiO3 substrate. The resistivity measurements ρ (T, B) of the sample under various values of the magnetic field up to 14T in directions B∥ab-plane and B∥c-axis with a dc weak transport current density were investigated in order to determine the activation energy and then understand the vortex dynamic phenomena and therefore deduce the vortex phase diagram of this material. The apparent activation energy U0 (B) calculated using an Arrhenius relation. The measured results of the resistivity were then adjusted to the modified thermally assisted flux flow model in order to account for the temperature-field dependence of the activation energy U (T, B). The obtained values from the thermally assisted activation energy, exhibit a behavior similar to the one showed with the Arrhenius model, albeit larger than the apparent activation energy with ∼1.5 order on magnitude for both cases of the magnetic field directions. The vortex glass model was also used to obtain the vortex-glass transition temperature from the linear fitting of [d ln ρ/dT ] −1 plots. In the course of this work thanks to the resistivity measurements the upper critical magnetic field Hc2 (T), the irreversibility line Hirr (T) and the crossover field HCrossOver (T) were located. These three parameters allowed us to establish a phase diagram of the studied material where limits of each vortex phase are sketched in order to optimize its applicability as a practical high temperature superconductor used for diverse purposes.

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