Global Failure Site Isolation: Thermal Techniques

1999 ◽  
pp. 67-86 ◽  
Author(s):  
Daniel L. Barton
Keyword(s):  
Site Isolation ◽  
Thermal Techniques ◽  
Failure Site

Defect Isolation and Characterization in Contacts by Using Primary Voltage Adjustment

2003 ◽  
Author(s):  
Yuan-Shih Chen ◽  
Jeng-Han Lee
Keyword(s):  
Cmos Technology ◽  
Primary Energy ◽  
Site Isolation ◽  
Popular Method ◽  
Isolation And Characterization ◽  
Contrast Condition ◽  
Contrast Technique ◽  
Defect Isolation ◽  
Voltage Contrast ◽  
Failure Site

Abstract Voltage contrast(VC) is a popular method for failure site isolation[1]. After study we find some weakness on tradition voltage contrast. This paper presents a new voltage contrast procedure that can conquer the weakness. For a CMOS technology, there are four kinds of contact node were used. They are N+/PW node, P+/NW node , poly gate node and well node. Traditional voltage contrast condition uses constant SEM primary energy like 1KV can not distinguish these four kinds of node well. For example a contact lead to P+/NW will be bright in tradition VC[2], but a contact connected to well will also be bright. It means tradition VC can not distinguish difference between contact lead to P+/NW and contact lead to well. To improve the weakness of the traditional VC, we will present a new Voltage Contrast technique, which could distinguish all contact types in CMOS technology.

Failure site isolation on passive RFID tags

2008 ◽  
Author(s):  
Bhanu Sood ◽  
Diganta Das ◽  
Michael Azarian ◽  
Michael Pecht ◽  
Brian Bolton ◽  
...  
Keyword(s):  
Rfid Tags ◽  
Site Isolation ◽  
Passive Rfid ◽  
Failure Site

Method of Failure Site Isolation for Flash Memory Device Using FIB, Passive Voltage Contrast Techniques

2005 ◽  
Author(s):  
Caiwen Yuan ◽  
Susan Li ◽  
Andy Gray
Keyword(s):  
Flash Memory ◽  
Memory Device ◽  
Fault Isolation ◽  
Feature Size ◽  
Site Isolation ◽  
Physical Evidence ◽  
Small Feature ◽  
Voltage Contrast ◽  
Metal Layers ◽  
Failure Site

Abstract Current VLSI devices have very complicated circuit designs and very small feature size. As a result, fault isolation on failing devices becomes a more and more challenging task. Although backside photoemission technique is commonly used to detect the failure site covered with multiple metal layers, it has the disadvantages of more time consumption and less success rate. Without a localized failure site, it will be very difficult, sometime even impossible, to find the physical evidence for the failures. This article describes a method that has been successfully used for isolating the wordline leakage on a memory FLASH device using FIB cutting and passive voltage contrast on the leaky wordline. The concept of this article is not just limited to this application; rather it can be used for all similar types of fault isolation work for other applications.

Failure Analysis Case Study of a 1.5 Meter Space Flex Harness

2017 ◽  
Author(s):  
Erick Kim ◽  
Kamjou Mansour ◽  
Gil Garteiz ◽  
Javeck Verdugo ◽  
Ryan Ross ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Field Of View ◽  
Area Of Interest ◽  
Air Stream ◽  
Novel Method ◽  
Temperature Controlled ◽  
Non Destructive ◽  
Failure Site

Abstract This paper presents the failure analysis on a 1.5m flex harness for a space flight instrument that exhibited two failure modes: global isolation resistances between all adjacent traces measured tens of milliohm and lower resistance on the order of 1 kiloohm was observed on several pins. It shows a novel method using a temperature controlled air stream while monitoring isolation resistance to identify a general area of interest of a low isolation resistance failure. The paper explains how isolation resistance measurements were taken and details the steps taken in both destructive and non-destructive analyses. In theory, infrared hotspot could have been completed along the length of the flex harness to locate the failure site. However, with a field of view of approximately 5 x 5 cm, this technique would have been time prohibitive.

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

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