Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

Failure Analysis Case Study of a 1.5 Meter Space Flex Harness

2017 ◽  
Author(s):  
Erick Kim ◽  
Kamjou Mansour ◽  
Gil Garteiz ◽  
Javeck Verdugo ◽  
Ryan Ross ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Field Of View ◽  
Area Of Interest ◽  
Air Stream ◽  
Novel Method ◽  
Temperature Controlled ◽  
Non Destructive ◽  
Failure Site

Abstract This paper presents the failure analysis on a 1.5m flex harness for a space flight instrument that exhibited two failure modes: global isolation resistances between all adjacent traces measured tens of milliohm and lower resistance on the order of 1 kiloohm was observed on several pins. It shows a novel method using a temperature controlled air stream while monitoring isolation resistance to identify a general area of interest of a low isolation resistance failure. The paper explains how isolation resistance measurements were taken and details the steps taken in both destructive and non-destructive analyses. In theory, infrared hotspot could have been completed along the length of the flex harness to locate the failure site. However, with a field of view of approximately 5 x 5 cm, this technique would have been time prohibitive.

Failure Analysis of CDM-ESD Damage in a GaAs RFIC

2000 ◽  
Author(s):  
Amy Poe ◽  
Steve Brockett ◽  
Tony Rubalcava
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Production Test ◽  
Analysis Techniques ◽  
Device Model ◽  
Charged Device ◽  
Subsequent Failure

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

New Rapid Failure Analysis Techniques for Multilevel Metallization

MRS Bulletin ◽  
1995 ◽  
Vol 20 (11) ◽  
pp. 74-77
Author(s):  
Edward I. Cole ◽  
Richard E. Anderson
Keyword(s):  
Integrated Circuits ◽  
Product Development ◽  
Failure Analysis ◽  
New Product Development ◽  
New Product ◽  
Electronics Industry ◽  
New Techniques ◽  
Analysis Techniques ◽  
Advantages And Disadvantages ◽  
Failure Site

Open interconnections on integrated circuits (ICs) are a serious and ubiquitous problem throughout the micro-electronics industry. The efforts to understand the mechanisms responsible for producing open interconnections and to develop analytical methods to localize them demonstrate the concern manufacturers have for this problem. Multiple layers of metallization not only increase the probability that an open conductor or via will occur because of the increased number of interconnections and vias but also increase the difficulty in localizing the site of the failure because upper layers may mask the failure site.Rapid failure analysis of open-conductor defects is critical in new product development and reliability assessment of ICs where manufacturing and product development delays can cost millions of dollars a day. In this article, we briefly review some standard failure analysis approaches and then concentrate on new techniques to rapidly locate open-conductor defects that would have been difficult or impossible to identify using earlier methods. Each method is described in terms of the physics of signal generation, application, and advantages and disadvantages when compared to existing methods.

scholarly journals The Effectiveness of Implementing Law Number 23 of 2004 on Elimination of Violence in Household: Case Study in Makassar City

2020 ◽  
Vol 2 (3) ◽  
pp. 1-11
Author(s):  
A. Dewi Vitasari ◽  
Hambali Thalib ◽  
Sufirman Rahman
Keyword(s):  
Data Analysis ◽  
Law Enforcement ◽  
Environmental Factors ◽  
Literature Study ◽  
Factors Affecting ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Quantitative Data Analysis ◽  
Quantitative Descriptive

This study aims to determine the effectiveness of implementing Law Number 23 of 2004 on Elimination of Violence in Household, as well as the factors that influence its enforcement. This type of research is empirical legal research with a quantitative descriptive in nature. This research was conducted in Makassar City to be precise at the Makassar City Police. The data collection techniques used in this study were questionnaires, documentation, and literature study. The data analysis technique used is quantitative data analysis techniques. The results showed that the implementation of Law No. 23 of 2004 in Makassar City is still considered less effective. Factors affecting the effectiveness of the implementation of Law No. 23 of 2004 in Makassar City consists of several factors, namely: legal factors; law enforcement factors; supporting facility factors; environmental factors; and cultural factors. in addition, environmental factors are the biggest factor affecting the effectiveness of the implementation of Law No. 23 of 2004. It is hoped that the police will further strengthen environmental factors in order to increase the effectiveness of the implementation of Law No. 23 of 2004 in the future.

Coupling C-AFM with Nanoprobing Technique for Further Junction Leakage Analysis

2006 ◽  
Author(s):  
Cha-Ming Shen ◽  
Tsan-Chen Chuang ◽  
Chen-May Huang ◽  
Shi-Chen Lin ◽  
Jie-Fei Chang
Keyword(s):  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Failure Modes ◽  
Electrical Characteristic ◽  
Failure Mechanisms ◽  
Gate Leakage ◽  
Process Technology ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Or Gate

Abstract With the evolution of advanced process technology, failure analysis has become more and more difficult because more defects are of the non-visual type (very tiny or even invisible defects) from new failure mechanisms. In this article, a novel and effective methodology which couples the conductive atomic force microscope (C-AFM) with nano-probing technique is proposed to reveal some particular failure modes which were not observable and difficult to identify with traditional physical failure analysis techniques. The capability of coupling C-AFM with nano-probing technique is used to distinguish cases which suffer general junction leakage or gate leakage from those that form the fake junction leakage or gate leakage cases. C-AFM can detect the abnormal contacts quickly, and nano-probing could provide the precise electrical characteristic further. Then, combining these variant measuring results, the favorable tactics can be adopted to deal with different states.

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

1997 ◽  
Author(s):  
E. H. Yeoh ◽  
W. M. Mak ◽  
H. C. Lock ◽  
S. K. Sim ◽  
C. C. Ooi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Packing Density ◽  
Failure Mechanisms ◽  
Potential Solution ◽  
Critical Dimensions ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
First Time

Abstract As device interconnect layers increase and transistor critical dimensions decrease below sub-micron to cater for higher speed and higher packing density, various new and subtle failure mechanisms have emerged and are becoming increasingly prevalent. Silicon dislocation is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre GFA wafer' functional failure problem. In this paper, several breakthrough failure analysis techniques used to narrow down and identify this new mechanism will be presented. Root cause determination and potential solution to this problem will also be discussed.

Failure Analysis of Advanced Microprocessors through Backside Approaches

1998 ◽  
Author(s):  
D. Davis ◽  
O. Diaz de Leon ◽  
L. Hughes ◽  
S. V. Pabbisetty ◽  
R. Parker ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Preparation Methods ◽  
Analysis Techniques ◽  
Analytical Approaches ◽  
Sample Preparation Methods ◽  
New Devices

Abstract The advent of Flip Chip and other complex package configurations and process technologies have made conventional failure analysis techniques inapplicable. This paper covers the ways in which conventional techniques have been modified to meet the FA challenges presented by these new devices – specifically, by forcing analysis to be done from the backside of the device. Modifications to the traditional FA process steps, including new sample preparation methods, changes in hardware, and alterations to physical failure analysis processes are described. To demonstrate the use of backside analytical approaches, some examples of applications and a case study are also included.

Case Study—Lock-in Thermography Application in Failure Analysis of a System Level DC-DC μModule Regulator

2017 ◽  
Author(s):  
Vikash Kumar ◽  
Devraj Karthikeyan
Keyword(s):  
Heat Source ◽  
Failure Analysis ◽  
Case Studies ◽  
Fault Localization ◽  
System Level ◽  
Thermal Failure ◽  
Analysis Process ◽  
Lock In

Abstract Fault localization is a common failure analysis process that is used to detect the anomaly on a faulty device. The Infrared Lock-In Thermography (LIT) is one of the localization techniques which can be used on the packaged chips for identifying the heat source which is a result of active damage. This paper extends the idea that the LIT analysis for fault localization is not only limited to the devices within the silicon die but it also highlights thermal failure indications of other components on the PCB (like capacitors, FETs etc on a system level DC-DC μmodule). The case studies presented demonstrate the effectiveness of using LIT in the Failure analysis process of a system level DC-DC μmodule regulator

Complementary Optical Techniques for Advanced IC Failure Analysis – Case Study

2005 ◽  
Author(s):  
Joy Y. Liao ◽  
Howard Lee Marks ◽  
Herve Deslandes
Keyword(s):  
Failure Analysis ◽  
Optical Techniques ◽  
Analysis Techniques ◽  
Diagnostic Time

Abstract We investigated and demonstrated the advantages and limitations of several optical methodologies as valuable silicon failure analysis techniques, and how they could be used in a complementary manner to assist in shortening the diagnostic time.

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