Failure Site Isolation: Photon Emission Microscopy Optical/Electron Beam Techniques

Failure Analysis Methodology on Resistive Open Defects

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0345 ◽

2014 ◽

Author(s):

A.C.T. Quah ◽

G.B. Ang ◽

D. Nagalingam ◽

C.Q. Chen ◽

H.P. Ng ◽

...

Keyword(s):

Failure Analysis ◽

Case Studies ◽

Photon Emission ◽

Analysis Methodology ◽

Failure Path ◽

Open Defect ◽

Emission Microscopy ◽

Open Defects ◽

Logic Array ◽

Failure Site

Abstract This paper describes the observation of photoemissions from saturated transistors along a connecting path with open defect in the logic array. By exploiting this characteristic phenomenon to distinguish open related issues, we described with 2 case studies using Photon Emission Microscopy, CAD navigation and layout tracing to identify the ‘open’ failure path. Further layout and EBAC analysis are then employed to effectively localize the failure site.

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Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy

ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1999p0069 ◽

1999 ◽

Author(s):

Mahmoud Rasras ◽

Ingrid De Wolf ◽

Guido Groeseneken ◽

Jian Chen ◽

Karlheinz Bock ◽

...

Keyword(s):

Raman Spectroscopy ◽

Temperature Profile ◽

Impact Ionization ◽

Light Emission ◽

Photon Emission ◽

Profile Measurement ◽

Esd Protection ◽

Protection Devices ◽

Emission Microscopy ◽

Failure Site

Abstract In this paper, Photon Emission Microscopy (PEM) and micro-Raman Spectroscopy (μRS) are applied for temperature profile measurements and failure characterization in gg-nMOS ESD protection devices. The measurements were carried out in avalanche and snapback biasing conditions. A correlation between the temperature profile obtained by μRS and the light emission location, measured by PEM, is observed for non-degraded devices. In addition, ESD-degraded devices were studied. PEM, μRS, Spectroscopic Photon Emission Microscopy (SPEM) and electrical measurements were used to investigate the origin of the light emitted at the failure site. They showed that the light emission occurring at the failure site is due to impact ionization.

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Analysis of Delta Iddq Soft Fails on Pass Chips

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0305 ◽

2006 ◽

Author(s):

I. Österreicher ◽

S. Eckl ◽

B. Tippelt ◽

S. Döring ◽

R. Prang ◽

...

Keyword(s):

Failure Analysis ◽

Failure Mode ◽

Photon Emission ◽

Complete Analysis ◽

Functional Tests ◽

Analysis Techniques ◽

Atomic Force ◽

Current Consumption ◽

Emission Microscopy ◽

Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

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A Study of Clustering for the Enhancement of Image Resolution in Dynamic Photon Emission

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0068 ◽

2019 ◽

Author(s):

S. Chef ◽

C. T. Chua ◽

C. L. Gan

Keyword(s):

Signal To Noise Ratio ◽

Photon Emission ◽

Optical Signal ◽

Image Resolution ◽

Time Dimension ◽

Processing Scheme ◽

3D Space ◽

Initial Acquisition ◽

Resolution Limits ◽

Emission Microscopy

Abstract Limited spatial resolution and low signal to noise ratio are some of the main challenges in optical signal observation, especially for photon emission microscopy. As dynamic emission signals are generated in a 3D space, the use of the time dimension in addition to space enables a better localization of switching events. It can actually be used to infer information with a precision above the resolution limits of the acquired signals. Taking advantage of this property, we report on a post-acquisition processing scheme to generate emission images with a better image resolution than the initial acquisition.

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