The Characterization of Solid Thin Films and Surfaces By Electron Microscopy and Diffraction

Author(s):  
R. B. Marcus
Author(s):  
Debbie G. Jones ◽  
Albert P. Pisano

A novel fabrication process is presented to create ultra thick ferromagnetic structures in silicon. The structures are fabricated by electroforming NiFe into silicon templates patterned with deep reactive ion etching (DRIE). Thin films are deposited into photoresist molds for characterization of an electroplating cell. Results show that electroplated films with a saturation magnetization above 1.6 tesla and compositions of approximately 50/50 NiFe can be obtained through agitation of the electrolyte. Scanning electron microscopy (SEM) images show that NiFe structures embedded in a 500 μm thick silicon wafer are realized and the roughening of the mold sidewalls during the DRIE aids in adhesion of the NiFe to the silicon.


2007 ◽  
Vol 546-549 ◽  
pp. 1699-1702
Author(s):  
Xi Ying Zhou ◽  
Liang He ◽  
Yan Hui Liu

Al-Cu-Fe quasicrystals powder was used to prepare the thin films on the surface of the A3 steel by the means of DMD-450 vacuum evaporation equipment. The thin films with different characterization were obtained through different parameters. The microstructures of the thin films were analyzed by Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Additionally, the nano-hardness and the modulus of the films are tested by MTS and Neophot micro-hardness meter. The results showed that the modulus of the films was about 160GPa. Nano hardness of the films was about 7.5 Gpa. The films consisted of CuAl2, AlCu3. The thickness and the micro-hardness of the films are improved. In same way, with the increase of the electric current, the thickness and the hardness of the films are also improved. Along with increase of the time and the electric current, the wear behavior of the films was improved. To some extent, the microstructure of films contained the quasicrystal phase of Al65Cu20Fe15.


2013 ◽  
Vol 743-744 ◽  
pp. 910-914
Author(s):  
Ting Han ◽  
Geng Rong Chang ◽  
Yun Jin Sun ◽  
Fei Ma ◽  
Ke Wei Xu

Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100 for 1h. X-ray diffraction (XRD), Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films. For the case of Si/C modulation ratio smaller than 1,interlayer diffusion is evident, which promotes the formation of α-SiC during thermal annealing. If the modulation ratio is larger than 1, the Si sublayers are partially crystallized, and the thicker the Si sublayers are, the crystallinity increases. To be excited, brick-shaped nc-Si is directly observed by HRTEM. The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects. The results are instructive in the application of solar cells.


1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.


2007 ◽  
Vol 997 ◽  
Author(s):  
Ashish Garg ◽  
Soumya Kar ◽  
Anju Dixit ◽  
D C Agrawal

AbstractIn this work, we report on the synthesis and characterization of thin films of (BiFeO3)1−x (PbTiO3)x (BFPT) solid solutions of compositions around morphotropic phase boundary (MPB) grown on platinized silicon (111) Pt/TiO2/SiO2/Si substrate by sol-gel based spin coating technique. The films were post-annealed at 700 and 750°C for 1 h in air. Morphological analysis of the films was carried out by scanning electron microscopy. Grazing incidence X-ray diffractometry revealed the perovskite structure of the films and peaks suggested the presence of rhombohedral structured pure BFPT phase in polycrystalline form. Scanning electron microscopy suggested that films annealed at 750degC had a denser microstructure as compared to those at 700°C. The room temperature dielectric constant of the films with composition of BF:PT :: 75:25 was measured to be ∼1200 at a frequency of 100 kHz.


Micron ◽  
2002 ◽  
Vol 33 (6) ◽  
pp. 581-586 ◽  
Author(s):  
C.W. Tai ◽  
K.Z. Baba-kishi ◽  
K.H. Wong

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