Transformer Design for 77-GHz Down-Converter in 28-nm FD-SOI CMOS Technology

2019 ◽  
pp. 195-201 ◽  
Author(s):  
Andrea Cavarra ◽  
Claudio Nocera ◽  
Giuseppe Papotto ◽  
Egidio Ragonese ◽  
Giuseppe Palmisano
Keyword(s):  
Cmos Technology ◽  
Transformer Design ◽  
77 Ghz ◽  
28 Nm ◽  
Soi Cmos

A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

2020 ◽  
pp. 1-18
Author(s):  
Florent Torres ◽  
Eric Kerhervé ◽  
Andreia Cathelin ◽  
Magali De Matos
Keyword(s):  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Fully Depleted ◽  
Technology Roadmap ◽  
Wide Range ◽  
28 Nm ◽  
Soi Cmos

Abstract This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

scholarly journals High-Frequency Low-Current Second-Order Bandpass Active Filter Topology and Its Design in 28-nm FD-SOI CMOS

2020 ◽  
Vol 10 (3) ◽  
pp. 27
Author(s):  
Andrea Ballo ◽  
Alfio Dario Grasso ◽  
Salvatore Pennisi ◽  
Chiara Venezia
Keyword(s):  
Resonant Frequency ◽  
Performance Optimization ◽  
Cmos Technology ◽  
Second Order ◽  
Silicon On Insulator ◽  
Circuit Performance ◽  
Fully Depleted ◽  
Current Consumption ◽  
28 Nm ◽  
Soi Cmos

Fully Depleted Silicon on Insulator (FD-SOI) CMOS technology offers the possibility of circuit performance optimization with reduction of both topology complexity and power consumption. These advantages are fully exploited in this paper in order to develop a new topology of active continuous-time second-order bandpass filter with maximum resonant frequency in the range of 1 GHz and wide electrically tunable quality factor requiring a very limited quiescent current consumption below 10 μA. Preliminary simulations that were carried out using the 28-nm FD-SOI technology from STMicroelectronics show that the designed example can operate up to 1.3 GHz of resonant frequency with tunable Q ranging from 90 to 370, while only requiring 6 μA standby current under 1-V supply.

In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology

2020 ◽  
Vol 168 ◽  
pp. 107737 ◽  
Author(s):  
P. Galy ◽  
R. Lethiecq ◽  
M. Bawedin
Keyword(s):  
Cmos Technology ◽  
Mos Devices ◽  
28 Nm ◽  
Soi Cmos

scholarly journals A 1-V 7th-Order SC Low-Pass Filter for 77-GHz Automotive Radar in 28-nm FD-SOI CMOS

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1466
Author(s):  
Alessandro Parisi ◽  
Giuseppe Papotto ◽  
Egidio Ragonese ◽  
Giuseppe Palmisano
Keyword(s):  
Low Voltage ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Automotive Radar ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
Radar Applications ◽  
77 Ghz ◽  
28 Nm

This paper presents a switched capacitor low-pass filter in a 28-nm fully depleted silicon on insulator CMOS technology for 77-GHz automotive radar applications. It is operated at a power supply as low as 1 V and guarantees 5-dB in-band voltage gain while providing out-of-band attenuation higher than 36 dB and a programmable passband up to 30 MHz. A double sampling technique is adopted, which allows high operating frequency to be achieved while saving power. Moreover, low-voltage biasing and common-mode feedback circuits are exploited to guarantee an almost rail-to-rail output voltage swing. The proposed filter provides an output 1-dB compression point as high as 8.7 dBm with a power consumption of 9 mW. To the authors’ knowledge, this is the first SC-based implementation of a low pass filter for automotive radar applications.

A 13.5-dBm 1-V Power Amplifier for W-Band Automotive Radar Applications in 28-nm FD-SOI CMOS Technology

2021 ◽  
pp. 1-1
Author(s):  
Claudio Nocera ◽  
Giuseppe Papotto ◽  
Andrea Cavarra ◽  
Egidio Ragonese ◽  
Giuseppe Palmisano
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
Automotive Radar ◽  
W Band ◽  
Radar Applications ◽  
28 Nm ◽  
Soi Cmos

scholarly journals An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4014
Author(s):  
Mohammadreza Dolatpoor Lakeh ◽  
Jean-Baptiste Kammerer ◽  
Enagnon Aguénounon ◽  
Dylan Issartel ◽  
Jean-Baptiste Schell ◽  
...  
Keyword(s):  
Single Photon ◽  
Cmos Technology ◽  
The Body ◽  
Silicon On Insulator ◽  
Experimental Results ◽  
Fully Depleted ◽  
Body Biasing ◽  
Fast Quenching ◽  
28 Nm ◽  
Soi Cmos

An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology. By exploiting the body biasing technique, the avalanche is detected very quickly and, consequently, is quenched very fast. The fast quenching decreases the avalanche charges, therefore resulting in the afterpulsing reduction. Both post-layout and experimental results are presented and are highly in accordance with each other. It is shown that the proposed AQAR circuit is able to detect the avalanche in less than 40 ps and reduce the avalanche charge and the afterpulsing up to 50%.

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