Main Parasitic Effects in Contactless Wafer Testing

ОСОБЕННОСТИ ПРОЕКТИРОВАНИЯ СВЧ-КЛЮЧЕЙ В РАЗНЫХ КОНСТРУКТИВНО-ТЕХНОЛОГИЧЕСКИХ БАЗИСАХ

Nanoindustry Russia ◽

10.22184/1993-8578.2020.13.3s.627.630 ◽

2020 ◽

Vol 96 (3s) ◽

pp. 627-630

Author(s):

А.Д. Калёнов ◽

И.И. Мухин ◽

В.В. Репин

Keyword(s):

High Frequencies ◽

Basic Parameters ◽

Parasitic Effects ◽

Soi Cmos

Представляется сравнение СВЧ-ключей, проектируемых в разных конструктивно-технологических базисах: КНИ, КМОП, биполярные и GaAs. Определенные трудности существуют при разработке ключей на сверхвысоких частотах, в разных технологиях необходимо учитывать различные эффекты. Наличие паразитных эффектов сильно осложняет разработку. В статье приводится оценка влияния паразитных эффектов на основные параметры СВЧ-ключей в разных конструктивно-технологических базисах. The paper offers a comparison of microwave keys designed in different structural and technological bases: SOI, CMOS, bipolar and GaAs. There are some difficulties in developing the keys to the ultra-high frequencies, in different technologies it is necessary to consider various effects. The presence of parasitic effects greatly complicates the development. The article provides an assessment of the influence of parasitic effects on the basic parameters of microwave keys in different structural and technological bases.

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Sensitivity assessment of parasitic effects in second-order active-filter configurations

IEE Journal on Electronic Circuits and Systems ◽

10.1049/ij-ecs.1978.0036 ◽

1978 ◽

Vol 2 (6) ◽

pp. 181 ◽

Cited By ~ 1

Author(s):

J.K. Fidler

Keyword(s):

Active Filter ◽

Second Order ◽

Sensitivity Assessment ◽

Parasitic Effects

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The parasitic effects in high-frequency dielectric spectroscopy of liquid crystals – the review

Liquid Crystals ◽

10.1080/02678292.2020.1852619 ◽

2021 ◽

pp. 1-29

Author(s):

Paweł Perkowski

Keyword(s):

Liquid Crystals ◽

Dielectric Spectroscopy ◽

High Frequency ◽

Parasitic Effects

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Memristors as Candidates for Replacing Digital Potentiometers in Electric Circuits

Electronics ◽

10.3390/electronics10020181 ◽

2021 ◽

Vol 10 (2) ◽

pp. 181

Author(s):

Ivo Marković ◽

Milka Potrebić ◽

Dejan Tošić

Keyword(s):

Phase Shifter ◽

Voltage Divider ◽

Frequency Characteristics ◽

Phase Shifters ◽

Pass Filter ◽

Electric Circuits ◽

Digital Potentiometer ◽

Memristive Circuits ◽

Parasitic Effects ◽

Additional Level

Digital potentiometers are substantial components for the design of many mixed-signal electronic circuits and systems. Their capability to program resistance value almost instantly provides hardware designers an additional level of freedom. Unfortunately, this feature is limited to DC and lower frequencies, due to parasitic effects. Nowadays, memristors as continuously tunable resistors are becoming candidates for potentiometer successors. Memristors are two-terminal non-volatile devices which have less significant parasitic effects and a wide resistance range. The memristance value can be changed on the fly. Using nanotechnology, memristor implementation has a nanoscale footprint with nanosecond transition between resistive states. In this paper, we present a comparison between the frequency characteristics of digital potentiometers and the only commercially available memristors. Memristor parasitic effects dominate at higher frequencies which extends the bandwidth. In order to present the advantages of memristive circuits, we have analyzed and implemented tunable circuits such as a voltage divider, an inverting amplifier, a high-pass filter, and a phase shifter. A commercially available memristor by KnowM Inc. is used for this purpose. Experimental results obtained by the measurements verify that a memristor has equal or better characteristics than a digital potentiometer. Memristive realizations of voltage dividers and inverting amplifiers have a wider bandwidth, while filters and phase shifters with a memristor have almost identical frequency characteristics as the corresponding realizations with a digital potentiometer.

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Experimental investigation of the Multipoint Ultrasonic Flowmeter

EPJ Web of Conferences ◽

10.1051/epjconf/201818002026 ◽

2018 ◽

Vol 180 ◽

pp. 02026

Author(s):

Filipský Jakub

Keyword(s):

Experimental Investigation ◽

Vector Field ◽

Velocity Field ◽

Computer Simulations ◽

Correlation Method ◽

Ultrasonic Flowmeter ◽

Ultrasonic Measurements ◽

Parasitic Effects ◽

Achievable Accuracy ◽

Three Components

The Multipoint Ultrasonic Flowmeter is a vector tomographic device capable of reconstructing all three components of velocity field based solely on boundary ultrasonic measurements. Computer simulations have shown the feasibility of such a device and have been published previously. This paper describes an experimental investigation of achievable accuracy of such a method. Doubled acoustic tripoles used to obtain information of the solenoidal part of vector field show extremely short differences between the Time Of Flights (TOFs) of individual sensors and are therefore sensitive to parasitic effects of TOF measurements. Sampling at 40MHz and correlation method is used to measure the TOF.

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