Analysis of latchup and parasitic effects in merged BiCMOS structures

1993 ◽  
Vol 28 (12) ◽  
pp. 1389-1394 ◽  
Author(s):  
S.S. Rofail ◽  
M.I. Elmasry
Keyword(s):  
2020 ◽  
Vol 96 (3s) ◽  
pp. 627-630
Author(s):  
А.Д. Калёнов ◽  
И.И. Мухин ◽  
В.В. Репин

Представляется сравнение СВЧ-ключей, проектируемых в разных конструктивно-технологических базисах: КНИ, КМОП, биполярные и GaAs. Определенные трудности существуют при разработке ключей на сверхвысоких частотах, в разных технологиях необходимо учитывать различные эффекты. Наличие паразитных эффектов сильно осложняет разработку. В статье приводится оценка влияния паразитных эффектов на основные параметры СВЧ-ключей в разных конструктивно-технологических базисах. The paper offers a comparison of microwave keys designed in different structural and technological bases: SOI, CMOS, bipolar and GaAs. There are some difficulties in developing the keys to the ultra-high frequencies, in different technologies it is necessary to consider various effects. The presence of parasitic effects greatly complicates the development. The article provides an assessment of the influence of parasitic effects on the basic parameters of microwave keys in different structural and technological bases.


Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 181
Author(s):  
Ivo Marković ◽  
Milka Potrebić ◽  
Dejan Tošić

Digital potentiometers are substantial components for the design of many mixed-signal electronic circuits and systems. Their capability to program resistance value almost instantly provides hardware designers an additional level of freedom. Unfortunately, this feature is limited to DC and lower frequencies, due to parasitic effects. Nowadays, memristors as continuously tunable resistors are becoming candidates for potentiometer successors. Memristors are two-terminal non-volatile devices which have less significant parasitic effects and a wide resistance range. The memristance value can be changed on the fly. Using nanotechnology, memristor implementation has a nanoscale footprint with nanosecond transition between resistive states. In this paper, we present a comparison between the frequency characteristics of digital potentiometers and the only commercially available memristors. Memristor parasitic effects dominate at higher frequencies which extends the bandwidth. In order to present the advantages of memristive circuits, we have analyzed and implemented tunable circuits such as a voltage divider, an inverting amplifier, a high-pass filter, and a phase shifter. A commercially available memristor by KnowM Inc. is used for this purpose. Experimental results obtained by the measurements verify that a memristor has equal or better characteristics than a digital potentiometer. Memristive realizations of voltage dividers and inverting amplifiers have a wider bandwidth, while filters and phase shifters with a memristor have almost identical frequency characteristics as the corresponding realizations with a digital potentiometer.


Author(s):  
Alessandro Finocchiaro ◽  
Giovanni Girlando ◽  
Alessandro Motta ◽  
Alberto Pagani ◽  
Giuseppe Palmisano
Keyword(s):  

2018 ◽  
Vol 180 ◽  
pp. 02026
Author(s):  
Filipský Jakub

The Multipoint Ultrasonic Flowmeter is a vector tomographic device capable of reconstructing all three components of velocity field based solely on boundary ultrasonic measurements. Computer simulations have shown the feasibility of such a device and have been published previously. This paper describes an experimental investigation of achievable accuracy of such a method. Doubled acoustic tripoles used to obtain information of the solenoidal part of vector field show extremely short differences between the Time Of Flights (TOFs) of individual sensors and are therefore sensitive to parasitic effects of TOF measurements. Sampling at 40MHz and correlation method is used to measure the TOF.


2013 ◽  
Vol 49 (11) ◽  
pp. 706-708 ◽  
Author(s):  
Pinping Sun ◽  
Peng Liu
Keyword(s):  

Author(s):  
Thomas Wich ◽  
Christian Stolle ◽  
Christoph Edeler ◽  
Sergej Fatikow
Keyword(s):  

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