Semiconductor Diode

2021 ◽  
pp. 1-44
Author(s):  
Stephan J. G. Gift ◽  
Brent Maundy
Keyword(s):  
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.


2020 ◽  
pp. 85-87
Author(s):  
O. S. Plotnikova ◽  
V. I. Apanasevich ◽  
M. A. Medkov ◽  
A. A. Polezhaev ◽  
V. I. Nevozhai ◽  
...  

Objective: The creation of the medicine for a local radiomodification of tumors.Methods: The level of the secondary radiation on the surface of the phosphate glass powder with the inclusion of tantalum oxide processed by 6 MeV deceleration emission was studied. Medical linear accelerator TrueBeam (Varian, USA), and Semiconductor diode detector PDI 2.0 (Sun Nuclear Corp., USA) having the system of moving in vertical plane and the system of position video recording were used.Results: The presence of the phosphate glass (containing 20% Та2О5) on the surface gave a 63.7% increase to the secondary radiation. It’s around two thirds of the overall level.Conclusion: An opportunity to create a medicine on the basis of phosphate glass, containing tantalum oxide, for local radiomodification of malignant tumors. 


1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1200-L1202 ◽  
Author(s):  
Kunio Ichino ◽  
Toshikazu Onishi ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita

Author(s):  
Zahra Al-Timimi

Many considerable investigations focused on the stimulation of therapeutic manners of infected injuries in mice. The exaggerated pathogens that induced wounds were gram-positive like staphylococcal and gram-negative, for example, Pseudomonas aeuroginosa and Acinetobacter baumannii. Acinetobacter can generate a scale range of an infection that may be received in a hospital or any wellness concern facility. In order to know the significance of laser 532 nm with a constant irradiance at various exposure times on the healing process of wounds infected by Acinetobacter baumannii, this study was performed on the BALB/C mice. An elliptical full-thickness skin injury was made on the backside of 45 adult female (BALB/C) mice. Injuries were affected via Acinetobacter baumannii and were randomly assigned into 3 groups. Semiconductor diode continuous wave laser, λ = 532 nm, with output power 40 mW was used. The power density was 5.71 mW/cm2, while the fluencies were 1.7 J/cm2 and 5.14 J/cm2. Fifteen mice were classified according to the times of irradiation. The first group was infected and presented as control, without irradiation. The second group was infected and irradiated for 5 minutes. The third group, likewise, was infected but irradiated for 15 minutes. All groups were subdivided according to the following period, 3, 5, and 10 days, after irradiation and the animals were killed after the treatment. Wound healing was made by measuring the rate of wound closure and histopathological evaluation. The study determined that 532 nm laser therapy had an obvious and positive influence on the healing of infected wounds with fluence (5.14 J/cm2).


Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4101
Author(s):  
Nikolai B. Suvorov ◽  
Alexander V. Belov ◽  
Konstantin G. Kuliabin ◽  
Aleksei A. Anisimov ◽  
Timofei V. Sergeev ◽  
...  

This paper describes the experimental results of testing a prototype of a high precision human skin rapid temperature fluctuations measuring instrument. Based on the author’s work, an original circuit solution on a miniature semiconductor diode sensor has been designed. The proposed circuitry provides operation in the full voltage range with automatic setting and holding the operating point, as well as the necessary slope of the conversion coefficient (up to 2300 mV/°C), which makes it possible to register fast temperature oscillations from the surface of the human body and other biological objects. Simulation results in the Microcap 12 software and laboratory tests have confirmed all declared design specifications: temperature resolution of 0.01 °C, transducer thermal time constant of 0.05 s. An original thermostat and an experimental setup for the simultaneous registration of the electrocardiogram, pulse wave signals from the Biopac polygraph MP36 and a signal of temperature oscillations from the prototype thermometer have been designed for further investigations. The preliminary test results indicates that using the designed measuring instrument gives a possibility to provide an in-depth study of the relationship between micro- and macro-blood circulations manifested in skin temperature fluctuations.


1995 ◽  
Vol 406 ◽  
Author(s):  
Ju-Hyung Lee ◽  
Yanzhen Xu ◽  
Veronica A. Burrows ◽  
Paul F. McMillan

AbstractA new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350°C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred Å. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (CV) characteristics with low hysteresis.


2013 ◽  
Vol 19 (4) ◽  
pp. 1900812-1900812 ◽  
Author(s):  
F. Grillot ◽  
Cheng Wang ◽  
N. A. Naderi ◽  
J. Even

1996 ◽  
Vol 68 (11) ◽  
pp. 351A-356A ◽  
Author(s):  
Kay Niemax ◽  
Aleksandr Zybin ◽  
Christoph Schnürer-Patschan ◽  
Henning Groll

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