A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT

Author(s):  
K. C. Praveen ◽  
N. Pushpa ◽  
M. N. Bharathi ◽  
John D. Cressler ◽  
A. P. Gnana Prakash
2017 ◽  
Author(s):  
Dac-Trung Nguyen ◽  
Laurent Lombez ◽  
Francois Gibelli ◽  
Myriam Paire ◽  
Soline Boyer-Richard ◽  
...  

Author(s):  
Konstantin Petrosyants ◽  
Maksim Kozhukhov

The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented.


1997 ◽  
Vol 44 (11) ◽  
pp. 2053-2058
Author(s):  
T. Yoshitomi ◽  
M. Saito ◽  
T. Ohguro ◽  
M. Ono ◽  
H.S. Momose ◽  
...  

Author(s):  
Marine Couret ◽  
Gerhard Fischer ◽  
Iria Garcia-Lopez ◽  
Magali De Matos ◽  
Francois Marc ◽  
...  

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1402-1405
Author(s):  
Chuanzhao Yu ◽  
Enjun Xiao ◽  
J.S. Yuan

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