scholarly journals UNIFIED BIPOLAR TRANSISTOR SPICE MODEL TAKING INTO ACCOUNT THE INFLUENCE OF DIFFERENT RADIATION TYPES

2020 ◽  
Author(s):  
Konstantin Petrosyants ◽  
Maksim Kozhukhov
Keyword(s):  
Integrated Circuits ◽  
Radiation Effect ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Electrical Characteristics ◽  
Spice Simulation ◽  
Sige Hbt ◽  
Spice Model ◽  
Before And After

The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

The Challenge of GaAs Heterojunction Bipolar Transistor Integrated Circuit Technology.

1988 ◽  
Vol 144 ◽  
Author(s):  
Han-Tzong Yuan
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
The Status ◽  
Impurity Doping

ABSTRACTThe status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.

SILICON:GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS: FROM EXPERIMENT TO TECHNOLOGY

1994 ◽  
Vol 05 (03) ◽  
pp. 473-491 ◽  
Author(s):  
B.S. MEYERSON ◽  
D.L. HARAME ◽  
J. STORK ◽  
E. CRABBE ◽  
J. COMFORT ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Film Growth ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Thin Film Growth ◽  
Sige Hbt ◽  
Digital To Analog Converters ◽  
Silicon Epitaxy ◽  
Scale Integration

Recent advances in thin film growth techniques, notably the maturation of low temperature silicon epitaxy, have enabled the routine fabrication of highly controlled dopant and silicon:germanium alloy profiles. These capabilities, combined with refinements in heterojunction bipolar transistor designs, have led to the first integrated circuits in the silicon:germanium materials system. Utilizing a commercial (Leybold-AG) UHVCVD tool for SiGe epitaxy on a standard 8" CMOS line, medium scale integration has been achieved, with the first IC components being SiGe HBT based 1 Ghz, 12 bit, digital to analog converters.

Effects of Backside Circuit Edit on Transistor Characteristics

2007 ◽  
Author(s):  
R.K. Jain ◽  
T. Malik ◽  
T.R. Lundquist ◽  
Q.S. Wang ◽  
R. Schlangen ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Flip Chip ◽  
Intrinsic Parameters ◽  
Chip Type ◽  
Device Structures ◽  
Before And After ◽  
Silicon Device ◽  
Metal Layers

Abstract Backside circuit edit techniques on integrated circuits (ICs) are becoming common due to increase number of metal layers and flip chip type packaging. However, a thorough study of the effects of these modifications has not been published. This in spite of the fact that the IC engineers have sometimes wondered about the effects of backside circuit edit on IC behavior. The IC industry was well aware that modifications can lead to an alteration of the intrinsic behavior of a circuit after a FIB edit [1]. However, because alterations can be controlled [2], they have not stopped the IC industry from using the FIB to successfully reconfigure ICs to produce working “silicon” to prove design and mask changes. Reliability of silicon device structures, transistors and diodes, are investigated by monitoring intrinsic parameters before and after various steps of modification.

scholarly journals Compact Modelling of Electrical, Optical and Thermal Properties of Multi-Colour Power LEDs Operating on a Common PCB

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1286
Author(s):  
Krzysztof Górecki ◽  
Przemysław Ptak
Keyword(s):  
Integrated Circuits ◽  
Optical Model ◽  
Printed Circuit Board ◽  
Circuit Board ◽  
Junction Temperature ◽  
Optical Parameters ◽  
Spice Simulation ◽  
Light Emitting ◽  
Proposed Model ◽  
Good Agreement

This paper concerns the problem of modelling electrical, thermal and optical properties of multi-colour power light-emitting diodes (LEDs) situated on a common PCB (Printed Circuit Board). A new form of electro-thermo-optical model of such power LEDs is proposed in the form of a subcircuit for SPICE (Simulation Program with Integrated Circuits Emphasis). With the use of this model, the currents and voltages of the considered devices, their junction temperature and selected radiometric parameters can be calculated, taking into account self-heating phenomena in each LED and mutual thermal couplings between each pair of the considered devices. The form of the formulated model is described, and a manner of parameter estimation is also proposed. The correctness and usefulness of the proposed model are verified experimentally for six power LEDs emitting light of different colours and mounted on an experimental PCB prepared by the producer of the investigated devices. Verification was performed for the investigated diodes operating alone and together. Good agreement between the results of measurements and computations was obtained. It was also proved that the main thermal and optical parameters of the investigated LEDs depend on a dominant wavelength of the emitted light.

scholarly journals Electrical Impedance Spectroscopy as Electrical Biopsy for Monitoring Radiation Sequelae of Intestine in Rats

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Pei-Ju Chao ◽  
Eng-Yen Huang ◽  
Kuo-Sheng Cheng ◽  
Yu-Jie Huang
Keyword(s):  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Integrated Circuits ◽  
Electrical Impedance ◽  
Roc Analysis ◽  
Electrical Impedance Spectroscopy ◽  
Electrical Characteristics ◽  
Injury Score ◽  
Histological Changes ◽  
Radiation Sequelae

Electrical impedance is one of the most frequently used parameters for characterizing material properties. The resistive and capacitive characteristics of tissue may be revealed by electrical impedance spectroscopy (EIS) as electrical biopsy. This technique could be used to monitor the sequelae after irradiation. In this study, rat intestinal tissues after irradiation were assessed by EIS system based on commercially available integrated circuits. The EIS results were fitted to a resistor-capacitor circuit model to determine the electrical properties of the tissue. The variations in the electrical characteristics of the tissue were compared to radiation injury score (RIS) by morphological and histological findings. The electrical properties, based on receiver operation curve (ROC) analysis, strongly reflected the histological changes with excellent diagnosis performance. The results of this study suggest that electrical biopsy reflects histological changes after irradiation. This approach may significantly augment the evaluation of tissue after irradiation. It could provide rapid results for decision making in monitoring radiation sequelae prospectively.

scholarly journals Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

2011 ◽  
Vol 2011 ◽  
pp. 1-8
Author(s):  
Agnes Nagy ◽  
Alicia Polanco ◽  
Manuel Alvarez
Keyword(s):  
Integrated Circuits ◽  
Extraction Method ◽  
Bipolar Transistors ◽  
Electronic Systems ◽  
Emission Coefficient ◽  
Physical Explanation ◽  
Simulation Procedure ◽  
Physical Effects ◽  
Precise Simulation ◽  
Theoretical Results

The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n), physical explanation and simulation procedure, as well as a new extraction method for the diffusion potentialVDE(T), based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.

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