Magnetic and Electronic Properties of Thin Films of Mn-Ga and Mn-Ge Compounds with Cubic, Tetragonal and Hexagonal Crystal Structures

Author(s):  
Huseyin Kurt ◽  
J. M. D. Coey
2014 ◽  
Vol 908 ◽  
pp. 124-128 ◽  
Author(s):  
S.B. Chen ◽  
Z.Y. Zhong

Thin films of transparent conducting gallium and titanium doped zinc oxide (GTZO) were prepared on glass substrates by magnetron sputtering technique using a sintered ceramic target. The microstructural properties of the deposited thin films were characterized with X-ray diffraction (XRD). The results demonstrated that the polycrystalline GTZO thin films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the working pressure significantly affects the crystal structures of the thin films. The GTZO thin film deposited at the working pressure of 0.4 Pa has the best crystallinity, the largest grain size and the lowest stress.


2011 ◽  
Vol 337 ◽  
pp. 532-535
Author(s):  
J.H. Gu ◽  
Zhi You Zhong ◽  
C.Y. Yang

Thin films of transparent conducting aluminum-doped zinc oxide (ZnO:Al) were grown by rf magnetron sputtering technique using a sintered ceramic target of ZnAl2O4. The microstructure and optoelectrical properties of the deposited films were characterized wiyh XRD, four-point probe and spectrophotometer. The results show that the polycrystalline ZnO:Al films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the substrate temperature significantly affects the crystal structures and optoelectrical properties of the thin films. The ZnO:Al films deposited at the substrate temperature of 670 K has the relatively well crystallinity, the largest crystal grain, the highest transmittance and the highest figure of merit.


Polymers ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1023
Author(s):  
María Elena Sánchez-Vergara ◽  
Leon Hamui ◽  
Elizabeth Gómez ◽  
Guillermo M. Chans ◽  
José Miguel Galván-Hidalgo

The synthesis of four mononuclear heptacoordinated organotin (IV) complexes of mixed ligands derived from tridentated Schiff bases and pyrazinecarboxylic acid is reported. This organotin (IV) complexes were prepared by using a multicomponent reaction, the reaction proceeds in moderate to good yields (64% to 82%). The complexes were characterized by UV-vis spectroscopy, IR spectroscopy, mass spectrometry, 1H, 13C, and 119Sn nuclear magnetic resonance (NMR) and elemental analysis. The spectroscopic analysis revealed that the tin atom is seven-coordinate in solution and that the carboxyl group acts as monodentate ligand. To determine the effect of the substituent on the optoelectronic properties of the organotin (IV) complexes, thin films were deposited, and the optical bandgap was obtained. A bandgap between 1.88 and 1.98 eV for the pellets and between 1.23 and 1.40 eV for the thin films was obtained. Later, different types of optoelectronic devices with architecture “contacts up/base down” were manufactured and analyzed to compare their electrical behavior. The design was intended to generate a composite based on the synthetized heptacoordinated organotin (IV) complexes embedded on the poly(3,4-ethylenedyoxithiophene)-poly(styrene sulfonate) (PEDOT:PSS). A Schottky curve at low voltages (<1.5 mV) and a current density variation of as much as ~3 × 10−5 A/cm2 at ~1.1 mV was observed. A generated photocurrent was of approximately 10−7 A and a photoconductivity between 4 × 10−9 and 7 × 10−9 S/cm for all the manufactured structures. The structural modifications on organotin (IV) complexes were focused on the electronic nature of the substituents and their ability to contribute to the electronic delocalization via the π system. The presence of the methyl group, a modest electron donor, or the non-substitution on the aromatic ring, has a reduced effect on the electronic properties of the molecule. However, a strong effect in the electronic properties of the material can be inferred from the presence of electron-withdrawing substituents like chlorine, able to reduce the gap energies.


2017 ◽  
Vol 110 (17) ◽  
pp. 171601 ◽  
Author(s):  
P. Orgiani ◽  
C. Bigi ◽  
P. Kumar Das ◽  
J. Fujii ◽  
R. Ciancio ◽  
...  

2002 ◽  
Vol 420-421 ◽  
pp. 312-317 ◽  
Author(s):  
R Sanjinés ◽  
O Banakh ◽  
C Rojas ◽  
P.E Schmid ◽  
F Lévy

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 251
Author(s):  
Peter Swekis ◽  
Aleksandr S. Sukhanov ◽  
Yi-Cheng Chen ◽  
Andrei Gloskovskii ◽  
Gerhard H. Fecher ◽  
...  

Magnetic Weyl semimetals are newly discovered quantum materials with the potential for use in spintronic applications. Of particular interest is the cubic Heusler compound Co2MnGa due to its inherent magnetic and topological properties. This work presents the structural, magnetic and electronic properties of magnetron co-sputtered Co2MnGa thin films, with thicknesses ranging from 10 to 80 nm. Polarized neutron reflectometry confirmed a uniform magnetization through the films. Hard x-ray photoelectron spectroscopy revealed a high degree of spin polarization and localized (itinerant) character of the Mn d (Co d) valence electrons and accompanying magnetic moments. Further, broadband and field orientation-dependent ferromagnetic resonance measurements indicated a relation between the thickness-dependent structural and magnetic properties. The increase of the tensile strain-induced tetragonal distortion in the thinner films was reflected in an increase of the cubic anisotropy term and a decrease of the perpendicular uniaxial term. The lattice distortion led to a reduction of the Gilbert damping parameter and the thickness-dependent film quality affected the inhomogeneous linewidth broadening. These experimental findings will enrich the understanding of the electronic and magnetic properties of magnetic Weyl semimetal thin films.


2018 ◽  
Vol 255 ◽  
pp. 871-883 ◽  
Author(s):  
P. Velusamy ◽  
R. Ramesh Babu ◽  
K. Ramamurthi ◽  
E. Elangovan ◽  
J. Viegas ◽  
...  

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