High-k Dielectric for Nanoscale MOS Devices

2017 ◽  
pp. 3-44
Author(s):  
Ling-Xuan Qian
Keyword(s):  
Mos Devices ◽  
High K ◽  
High K Dielectric

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

2017 ◽  
Vol 897 ◽  
pp. 571-574 ◽  
Author(s):  
Vidya Naidu ◽  
Sivaprasad Kotamraju
Keyword(s):  
Switching Frequency ◽  
Power Losses ◽  
Switching Power ◽  
Mos Devices ◽  
High K ◽  
High Switching Frequency ◽  
Switching Characteristics ◽  
High K Dielectric ◽  
Current Duration ◽  
Physics Based Simulation

Silicon Carbide (SiC) based MOS devices are one of the promising devices for high temperature, high switching frequency and high power applications. In this paper, the static and dynamic characteristics of an asymmetric trench gate SiC IGBT with high-k dielectrics- HfO2 and ZrO2 are investigated. SiC IGBT with HfO2 and ZrO2 exhibited higher forward transconductance ratio and lower threshold voltage compared to conventionally used SiO2. In addition, lower switching power losses have been observed in the case of high-k dielectrics due to reduced tail current duration.

High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices

2007 ◽  
Vol 253 (19) ◽  
pp. 8184-8191 ◽  
Author(s):  
M. Filipescu ◽  
N. Scarisoreanu ◽  
V. Craciun ◽  
B. Mitu ◽  
A. Purice ◽  
...  
Keyword(s):  
Mos Devices ◽  
High K ◽  
High K Dielectric

A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

2016 ◽  
Vol 95 ◽  
pp. 24-32 ◽  
Author(s):  
Niladri Pratap Maity ◽  
Reshmi Maity ◽  
R.K. Thapa ◽  
Srimanta Baishya
Keyword(s):  
Current Density ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Density Model ◽  
Mos Devices ◽  
High K ◽  
High K Dielectric

Capacitance-voltage characteristics measured through pulse technique on high- k dielectric MOS devices

Vacuum ◽  
2017 ◽  
Vol 140 ◽  
pp. 19-23
Author(s):  
Qifeng Lu ◽  
Yanfei Qi ◽  
Ce Zhou Zhao ◽  
Chun Zhao ◽  
Stephen Taylor ◽  
...  
Keyword(s):  
Pulse Technique ◽  
Mos Devices ◽  
High K ◽  
Capacitance Voltage ◽  
High K Dielectric

A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices

Silicon ◽  
2017 ◽  
Vol 10 (4) ◽  
pp. 1645-1652 ◽  
Author(s):  
N. P. Maity ◽  
Reshmi Maity ◽  
S. Baishya
Keyword(s):  
Current Model ◽  
Tunneling Current ◽  
Mos Devices ◽  
High K ◽  
High K Dielectric

scholarly journals Analysis of Flatband Voltage for MOS Devices Using High-K Dielectric Materials

2014 ◽  
Vol 5 ◽  
pp. 1198-1204 ◽  
Author(s):  
N.P. Maity ◽  
Atul Kumar ◽  
Reshmi Maity ◽  
S. Baishya
Keyword(s):  
Dielectric Materials ◽  
Mos Devices ◽  
High K ◽  
Flatband Voltage ◽  
High K Dielectric

Elimination of Native Ge Dielectrics at Ge/High-k Dielectric Interfaces for Ge MOS Devices

2019 ◽  
Vol 16 (10) ◽  
pp. 381-395 ◽  
Author(s):  
Gerald Lucovsky ◽  
Joseph P. Long ◽  
Hyungtak Seo ◽  
Kwun-Bum Chung ◽  
Sanghyun Lee
Keyword(s):  
Mos Devices ◽  
High K ◽  
Dielectric Interfaces ◽  
High K Dielectric

Analysis of Interface Trap Densities for Al2O3 Dielectric Material Based Ultra Thin MOS Devices

2016 ◽  
Vol 860 ◽  
pp. 25-29 ◽  
Author(s):  
Niladri Pratap Maity ◽  
Rajiv R. Thakur ◽  
Reshmi Maity ◽  
R.K. Thapa ◽  
S. Baishya
Keyword(s):  
Dielectric Material ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Mos Devices ◽  
Novel Approach ◽  
High K ◽  
Conductance Method ◽  
High K Dielectric ◽  
P Type

In this paper the interface trap densities (Dit) are analyzed for ultra thin dielectric material based metal oxide semiconductor (MOS) devices using high-k dielectric material Al2O3. The Dit have been calculated by a novel approach using conductance method and it indicates that by reducing the thickness of the oxide, the Dit increases and similar increase is also found by replacing SiO2 with Al2O3. For the same oxide thickness SiO2 has the lowest Dit and found to be the order of 1011 cm-2eV-1. The Dit is found to be in good agreement with published fabrication results at p-type doping level of 1 × 1017 cm-3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

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