scholarly journals The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

2017 ◽  
pp. 273-280 ◽  
Author(s):  
A. G. Gudkov ◽  
V. D. Shashurin ◽  
V. N. Vyuginov ◽  
V. G. Tikhomirov ◽  
S. I. Vidyakin ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Barrier Layer ◽  
Space Applications ◽  
Barrier Layer Thickness ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer

scholarly journals Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Yanli Liu ◽  
Xifeng Yang ◽  
Dunjun Chen ◽  
Hai Lu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Stress State ◽  
Raman Scattering ◽  
Barrier Layer ◽  
Algan Layer ◽  
Temperature Dependent ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
Resonant Raman ◽  
Resonant Raman Scattering

The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

Impact of strain relaxation of AlGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT

2006 ◽  
Vol 49 (4) ◽  
pp. 393-399 ◽  
Author(s):  
Yan Yang ◽  
Yue Hao ◽  
Jincheng Zhang ◽  
Chong Wang ◽  
Qian Feng
Keyword(s):  
Barrier Layer ◽  
Strain Relaxation ◽  
Al Content ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
High Al Content

Growth and Characterization of AlGaN/AlN/GaN HEMT Structures with a Compositionally Step-Graded AlGaN Barrier Layer

2007 ◽  
Vol 24 (6) ◽  
pp. 1705-1708 ◽  
Author(s):  
Ma Zhi-Yong ◽  
Wang Xiao-Liang ◽  
Hu Guo-Xin ◽  
Ran Jun-Xue ◽  
Xiao Hong-Ling ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer

Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

2017 ◽  
Vol 46 (10) ◽  
pp. 6104-6110 ◽  
Author(s):  
Franky J. Lumbantoruan ◽  
Yuen-Yee Wong ◽  
Wei-Ching Huang ◽  
Hung-Wei Yu ◽  
Edward-Yi Chang
Keyword(s):  
Flow Rate ◽  
Barrier Layer ◽  
Material Properties ◽  
Layer Growth ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer
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