Impact of strain relaxation of AlGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT

2006 ◽  
Vol 49 (4) ◽  
pp. 393-399 ◽  
Author(s):  
Yan Yang ◽  
Yue Hao ◽  
Jincheng Zhang ◽  
Chong Wang ◽  
Qian Feng
Keyword(s):  
Barrier Layer ◽  
Strain Relaxation ◽  
Al Content ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
High Al Content

Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer

2021 ◽  
Vol 570 ◽  
pp. 151190
Author(s):  
Jiyu Zhou ◽  
Xiaobo Li ◽  
Taofei Pu ◽  
Yue He ◽  
Xiao Wang ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Al Content ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
High Al Content

scholarly journals Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Yanli Liu ◽  
Xifeng Yang ◽  
Dunjun Chen ◽  
Hai Lu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Stress State ◽  
Raman Scattering ◽  
Barrier Layer ◽  
Algan Layer ◽  
Temperature Dependent ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
Resonant Raman ◽  
Resonant Raman Scattering

The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

2011 ◽  
Vol 20 (9) ◽  
pp. 097701 ◽  
Author(s):  
Zi-Yang Liu ◽  
Jin-Cheng Zhang ◽  
Huan-Tao Duan ◽  
Jun-Shuai Xue ◽  
Zhi-Yu Lin ◽  
...  
Keyword(s):  
Transport Properties ◽  
Barrier Layer ◽  
Strain Relaxation ◽  
Algan Barrier ◽  
Algan Barrier Layer

Growth and Characterization of AlGaN/AlN/GaN HEMT Structures with a Compositionally Step-Graded AlGaN Barrier Layer

2007 ◽  
Vol 24 (6) ◽  
pp. 1705-1708 ◽  
Author(s):  
Ma Zhi-Yong ◽  
Wang Xiao-Liang ◽  
Hu Guo-Xin ◽  
Ran Jun-Xue ◽  
Xiao Hong-Ling ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer

DEPENDENCE OF CAPACITANCE–VOLTAGE CHARACTERISTICS OF NOMINALLY UNDOPED AlGaN/GaN HETEROSTRUCTURES ON SEVERAL KEY PARAMETERS OF THE MATERIALS

2011 ◽  
Vol 25 (15) ◽  
pp. 1293-1302 ◽  
Author(s):  
GUIYING TAN ◽  
YONGBO SU
Keyword(s):  
Barrier Layer ◽  
Chemical Vapor ◽  
Thickness Effect ◽  
Organic Chemical ◽  
Carrier Distribution ◽  
Al Content ◽  
Algan Barrier ◽  
Capacitance Voltage ◽  
Algan Barrier Layer ◽  
Gan Heterostructure

Nominally undoped AlGaN / GaN heterostructure samples were grown on c-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition, and their material properties, such as crystal quality, roughness of heterointerface, thickness and Al mole fraction of AlGaN barrier layer, were identified by high resolution X-ray diffraction (HRXRD). Mercury-probe capacitance–voltage (C–V) measurements were carried out to investigate the carrier distribution in the heterostructures and accurately evaluate the sheet carrier concentration of two-dimensional electron gas (2DEG) formed at AlGaN / GaN heterointerface. The dependence of C–V characteristics of these samples on some key material parameters were clearly revealed. The Al -content effect, barrier-thickness effect in AlGaN layer, and their synergy effect were specifically studied. It demonstrated that the C–V characteristics of AlGaN / GaN heterostructure could be improved by perfecting the crystal epitaxial process, and adjusting the Al -content or thickness of AlGaN barrier layer.

Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

2017 ◽  
Vol 46 (10) ◽  
pp. 6104-6110 ◽  
Author(s):  
Franky J. Lumbantoruan ◽  
Yuen-Yee Wong ◽  
Wei-Ching Huang ◽  
Hung-Wei Yu ◽  
Edward-Yi Chang
Keyword(s):  
Flow Rate ◽  
Barrier Layer ◽  
Material Properties ◽  
Layer Growth ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer
Sign in / Sign up

Export Citation Format

Share Document