Optimization of the Concentration of Molybdenum Disulfide (MoS2) for Formation of Atomically Thin Layers

2019 ◽  
pp. 39-43 ◽  
Author(s):  
Vineeta ◽  
Shyama Rath
Keyword(s):  
Molybdenum Disulfide ◽  
Thin Layers

scholarly journals Поляризационные процессы в тонких слоях аморфного MoS-=SUB=-2-=/SUB=-, полученных методом высокочастотного магнетронного распыления

2020 ◽  
Vol 54 (5) ◽  
pp. 461
Author(s):  
А.А. Кононов ◽  
Р.А. Кастро Арата ◽  
Д.Д. Главная ◽  
В.М. Стожаров ◽  
Д.М. Долгинцев ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Charge Transport ◽  
Relaxation Process ◽  
Molybdenum Disulfide ◽  
Dielectric Spectroscopy ◽  
Activation Energies ◽  
Thin Layers ◽  
Polarization Process ◽  
Relaxation Polarization ◽  
Dipole Polarization

Abstract The polarization processes in thin layers of amorphous molybdenum disulfide MoS_2 are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization process, as well as the activation energies E _ a and E _σ of the relaxation process and conductivity, respectively, are determined. The fact that the two activation energies are close to each other suggests that the processes of relaxation and charge transport are driven by the same mechanism.

Resonant Raman profiles and µ-photoluminescence of atomically thin layers of molybdenum disulfide

2012 ◽  
Vol 249 (12) ◽  
pp. 2644-2647 ◽  
Author(s):  
Nils Scheuschner ◽  
Oliver Ochedowski ◽  
Marika Schleberger ◽  
Janina Maultzsch
Keyword(s):  
Molybdenum Disulfide ◽  
Thin Layers ◽  
Resonant Raman

Immunoferritin localization of intracellular antigens in positively stained frozen sections

1978 ◽  
Vol 36 (2) ◽  
pp. 168-169
Author(s):  
K. T. Tokuyasu
Keyword(s):  
Surface Tension ◽  
Water Surface ◽  
Thin Layers ◽  
The Other ◽  
Positive Staining ◽  
Frozen Sections ◽  
The Past ◽  
Ultrathin Frozen Sections ◽  
Definition Of

During the past investigations of immunoferritin localization of intracellular antigens in ultrathin frozen sections, we found that the degree of negative staining required to delineate u1trastructural details was often too dense for the recognition of ferritin particles. The quality of positive staining of ultrathin frozen sections, on the other hand, has generally been far inferior to that attainable in conventional plastic embedded sections, particularly in the definition of membranes. As we discussed before, a main cause of this difficulty seemed to be the vulnerability of frozen sections to the damaging effects of air-water surface tension at the time of drying of the sections.Indeed, we found that the quality of positive staining is greatly improved when positively stained frozen sections are protected against the effects of surface tension by embedding them in thin layers of mechanically stable materials at the time of drying (unpublished).

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Domain structures in thin layers of a ferrocolloid

1993 ◽  
Vol 3 (11) ◽  
pp. 1633-1645 ◽  
Author(s):  
Yu. A. Buyevich ◽  
A. Yu. Zubarev
Keyword(s):  
Thin Layers ◽  
Domain Structures

INTERNAL FRICTION INVESTIGATIONS OF ELECTROLYTICALLY DEPOSITED THIN LAYERS

1983 ◽  
Vol 44 (C9) ◽  
pp. C9-487-C9-492
Author(s):  
G. Haneczok ◽  
R. Kuśka ◽  
R. Kwiatkowski ◽  
J. W. Moro
Keyword(s):  
Internal Friction ◽  
Thin Layers

Evaluation of a molybdenum sulfide reference electrode in hot alkaline solutions

TAPPI Journal ◽  
2010 ◽  
Vol 9 (7) ◽  
pp. 35-41
Author(s):  
OUTI A. HYÖKYVIRTA ◽  
TOM E. GUSTAFSSON
Keyword(s):  
Molybdenum Disulfide ◽  
Surface Film ◽  
Reference Electrode ◽  
Exposure Period ◽  
Molybdenum Sulfide ◽  
Alkaline Solutions ◽  
Internal Reference ◽  
Cell Potential ◽  
Pulp Digester ◽  
Alkaline Sulfide

This investigation evaluated the applicability of a molybdenum sulfide reference electrode (MSRE) as an internal reference electrode for use in alkaline sulfide solutions over a range of pulp digester liquors at 170°C. The electrode remained stable during the exposure period of two weeks. The experimentally determined half cell potential of the MSRE is E = -0.91 VSHE. The surface of the MSRE was examined by scanning electron microscope (SEM) and electron spectroscopy for chemical analysis (ESCA) to verify the chemical composition of the thin surface film. Based on ESCA studies, the surface film contained molybdenum disulfide and sodium disulfide. During storage of the specimens, sulfide was partly oxidized to sodium sulfite in air. Next to the metallic molybdenum, a mixed molybdenum disulfide and molybdenum hydroxide layer was detected.

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

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