Domain structures in thin layers of a ferrocolloid

1993 ◽  
Vol 3 (11) ◽  
pp. 1633-1645 ◽  
Author(s):  
Yu. A. Buyevich ◽  
A. Yu. Zubarev
1996 ◽  
Vol 05 (02) ◽  
pp. 223-246 ◽  
Author(s):  
YUJIE J. DING ◽  
JACOB B. KHURGIN

We have considered two novel configurations for optical parametric oscillators (OPO’s): transversely-pumped counter-propagating and nondegenerate backward OPO’s due to the distributed feedback provided through the opposite propagation directions of the signal and idler. In both configurations, by changing the incident angle of the pump beam, one can tune the output frequency in a large range. The threshold pump powers for the oscillation can be as low as ~10 W for the transversely-pumped counter-propagating OPO’s and 44 W for the nondegenerate backward OPO’s. The quasi-phase matching is achieved by spatially modulating second-order susceptibility along the growth direction based on semiconductor alternating thin layers or asymmetric quantum-well domain structures or by electric-field poling in conventional second-order nonlinear materials. The nondegenerate backward OPO’s offer the most efficient conversion among all the configurations for the OPO’s having the same threshold pump power. The transversely-pumped counter-propagating OPO’s have the optimal pump power.


Author(s):  
K. T. Tokuyasu

During the past investigations of immunoferritin localization of intracellular antigens in ultrathin frozen sections, we found that the degree of negative staining required to delineate u1trastructural details was often too dense for the recognition of ferritin particles. The quality of positive staining of ultrathin frozen sections, on the other hand, has generally been far inferior to that attainable in conventional plastic embedded sections, particularly in the definition of membranes. As we discussed before, a main cause of this difficulty seemed to be the vulnerability of frozen sections to the damaging effects of air-water surface tension at the time of drying of the sections.Indeed, we found that the quality of positive staining is greatly improved when positively stained frozen sections are protected against the effects of surface tension by embedding them in thin layers of mechanically stable materials at the time of drying (unpublished).


Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.


Author(s):  
Sonoko Tsukahara ◽  
Tadami Taoka ◽  
Hisao Nishizawa

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.


Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.


Author(s):  
H. Q. Ye ◽  
T.S. Xie ◽  
D. Li

The Ti3Al intermetallic compound has long been recognized as potentially useful structural materials. It offers attractive strength to weight and elastic modulus to weight ratios. Recent work has established that the addition of Nb to Ti3Al ductilized this compound. In this work the fundamental problem of this alloy, i.e. order-disorder and antiphase domain structures was investigated at the atomic scale.The Ti3Al+10at%Nb alloys used in this study were treated at 1060°C and then aged at 700°C for 2 hours. The specimens suitable for TEM were prepared by standard jet electrolytic-polishing technique. A JEM-200CX electron microscope with an interpretable resolution of about 0.25 nm was used for HREM.The [100] and [001] projections of the α2 phase were shown in Fig.l.The alloy obtained consist of at least two phases-α2(Ti3Al) and β0 structures. Moreover, a disorder α phase with small volume fraction was also observed. Fig.2 gives [100] and [001] diffraction patterns of the α2 phase. Since lattice parameters of the ordered α2 (a=0.579, c=0.466 nm) and disorder α phase (a0=0.294≈a/2, c0=0.468 nm) are almost the same, their diffraction patterns are difficult to be distinguished when they are overlapped with epitaxial orientation relationships.


1983 ◽  
Vol 44 (C9) ◽  
pp. C9-487-C9-492
Author(s):  
G. Haneczok ◽  
R. Kuśka ◽  
R. Kwiatkowski ◽  
J. W. Moro

Author(s):  
A. R. Lang

AbstractX-ray topography provides a non-destructive method of mapping point-by-point variations in orientation and reflecting power within crystals. The discovery, made by several workers independently, that in nearly perfect crystals it was possible to detect individual dislocations by X-ray diffraction contrast started an epoch of rapid exploitation of X-ray topography as a new, general method for assessing crystal perfection. Another discovery, that of X-ray Pendellösung, led to important theoretical developments in X-ray diffraction theory and to a new and precise method for measuring structure factors on an absolute scale. Other highlights picked out for mention are studies of Frank-Read dislocation sources, the discovery of long dislocation helices and lines of coaxial dislocation loops in aluminium, of internal magnetic domain structures in Fe-3 wt.% Si, and of stacking faults in silicon and natural diamonds.


Sign in / Sign up

Export Citation Format

Share Document