Amorphous and Crystalline Silicon Carbide II

1989 ◽  
Keyword(s):  
Silicon Carbide ◽  
Crystalline Silicon

Crystalline silicon surface passivation by amorphous silicon carbide films

2007 ◽  
Vol 91 (2-3) ◽  
pp. 174-179 ◽  
Author(s):  
M. Vetter ◽  
I. Martín ◽  
R. Ferre ◽  
M. Garín ◽  
R. Alcubilla
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Amorphous Silicon Carbide ◽  
Silicon Surface Passivation

Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Crystalline Silicon ◽  
Epitaxial Films ◽  
Ablation Plume ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Silicon Target ◽  
Oriented Films ◽  
Pure Carbon

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

Long-Lived, Transferred Crystalline Silicon Carbide Nanomembranes for Implantable Flexible Electronics

ACS Nano ◽  
2019 ◽  
Vol 13 (10) ◽  
pp. 11572-11581 ◽  
Author(s):  
Hoang-Phuong Phan ◽  
Yishan Zhong ◽  
Tuan-Khoa Nguyen ◽  
Yoonseok Park ◽  
Toan Dinh ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Flexible Electronics ◽  
Crystalline Silicon

Mechanical Properties of Crystalline Silicon Carbide Nanowires

2015 ◽  
Vol 15 (2) ◽  
pp. 1660-1668 ◽  
Author(s):  
Huan Zhang ◽  
Weiqiang Ding ◽  
Daryush K. Aidun
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Crystalline Silicon

Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition

2007 ◽  
Vol 46 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Chandan Banerjee ◽  
Kannan Lakshmi Narayanan ◽  
Keisuke Haga ◽  
Jaran Sritharathikhun ◽  
Shinsuke Miyajima ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Heterojunction Solar Cell ◽  
Hot Wire ◽  
Silicon Heterojunction Solar Cell ◽  
Cubic Silicon Carbide

Deposition of diamond films on single crystalline silicon carbide substrates

2020 ◽  
Vol 101 ◽  
pp. 107625
Author(s):  
Debarati Mukherjee ◽  
Filipe Oliveira ◽  
Simone Camargo Trippe ◽  
Shlomo Rotter ◽  
Miguel Neto ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Diamond Films ◽  
Single Crystalline Silicon ◽  
Single Crystalline

scholarly journals Buckling Porous SiC Membranes

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 785
Author(s):  
Markus Leitgeb ◽  
Christopher Zellner ◽  
Manuel Dorfmeister ◽  
Michael Schneider ◽  
Ulrich Schmid
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Design Concepts ◽  
Photochemical Etching ◽  
Potential Applications ◽  
Etching Parameters ◽  
Porous Sic ◽  
Highly Porous

In preliminary studies it could be shown that single crystalline silicon carbide wafers can be porosified with metal assisted photochemical etching. Furthermore, the generation of porous areas which are locally defined is possible with this method. By adjusting the etching parameters, a highly porous layer (degree of porosity of 90%) can be formed which is under-etched by a line of breakage. By depositing a compressively stressed amorphous SiC:H thin film on top of a porous region, the a-SiC:H film can be locally separated from the substrate, resulting in a buckled membrane configuration. Such membranes might open up potential applications in MEMS design concepts.

Flame Synthesis Of High Purity, Nanosized Crystalline Silicon Carbide Powder

1995 ◽  
Vol 410 ◽  
Author(s):  
D. G. Keil ◽  
H. F. Calcote ◽  
R. J Gill
Keyword(s):  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Flame Synthesis ◽  
Carbide Powder ◽  
Air Exposure ◽  
Precise Control ◽  
Metal Impurities ◽  
High Yields ◽  
Silicon Carbide Powder

ABSTRACTSelf-propagating flames in pure silane-acetylene mixtures produce silicon carbide (SiC) powder and hydrogen as main products. Through precise control of the stoichiometry of the reactant gas mixture, it has been possible to produce white SiC at high yields. Characterization of such powders by TEM has shown that the nascent powder consists of polycrystalline hexagonal plates with a narrow size distribution (40 ± 7 nm diameter). Infrared spectroscopy of powders indicate microcrystalline SiC and little bound hydrogen. Chemical analysis by the ANSI method showed the powder to be >96 wt % SiC with an impurity of silica (3.9 weight %) due to air exposure of the powder. Traces (0.1 to 0.2 weight %) of both free carbon and free silicon were found. Metal impurities detected by SIMS were typically low: less than 10 ppba for aluminum, sodium, titanium and vanadium. Boron was observed at 10 ppma. Like the oxygen, the boron impurities are probably associated with exposure of the powders to the atmosphere.

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