CW-Laser Annealing of CdTe Epitaxial Layers

1984 ◽  
pp. 61-66 ◽  
Author(s):  
D. J. As ◽  
L. Palmetshofer ◽  
J. Schuller ◽  
K. Lischka
Keyword(s):  
Laser Annealing ◽  
Epitaxial Layers ◽  
Cw Laser

Laser annealing of defects in CdTe epitaxial layers

1985 ◽  
Vol 72 (1-2) ◽  
pp. 246-251 ◽  
Author(s):  
D.J. As ◽  
L. Palmetshofer
Keyword(s):  
Laser Annealing ◽  
Epitaxial Layers

scholarly journals A comparison between furnace and cw laser annealing of a-Si : evidence of different crystallization states

1982 ◽  
Vol 17 (12) ◽  
pp. 783-786 ◽  
Author(s):  
D. Bensahel ◽  
G. Auvert ◽  
Y. Pauleau ◽  
J.C. Pfister
Keyword(s):  
Laser Annealing ◽  
Cw Laser

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

Impact of Germanium Concentration on the Ultraviolet Nanosecond Laser Annealing of Intrinsic Si1-xGex Epitaxial Layers

2019 ◽  
Author(s):  
L. Dagault ◽  
S. Kerdilès ◽  
P. Acosta-Alba ◽  
J.-M. Hartmann ◽  
J.-P. Barnes ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Epitaxial Layers ◽  
Germanium Concentration

CW laser annealing of boron implanted polycrystalline silicon

1985 ◽  
Vol 28 (4) ◽  
pp. 339-344 ◽  
Author(s):  
S. Peterström ◽  
G. Holmén ◽  
G. Alestig
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Cw Laser

Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers

2019 ◽  
Vol 8 (3) ◽  
pp. P202-P208 ◽  
Author(s):  
L. Dagault ◽  
P. Acosta-Alba ◽  
S. Kerdilès ◽  
J. P. Barnes ◽  
J. M. Hartmann ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Epitaxial Layers

CW Laser Annealing Of Ion-Implanted Silicon

1980 ◽  
Author(s):  
L. D. Hess ◽  
R. A. Forber ◽  
S. A. Kokorowski ◽  
G. L. Olson
Keyword(s):  
Laser Annealing ◽  
Cw Laser ◽  
Ion Implanted

Aligned, Coexisting Liquid and Solid Regions in Pulsed and CW Laser Annealing of Si

1982 ◽  
Vol 13 ◽  
Author(s):  
R. J. Nemanich ◽  
D. K. Biegelsen ◽  
W. G. Hawkins
Keyword(s):  
Surface Topography ◽  
Crystallization Process ◽  
Laser Annealing ◽  
Annealing Process ◽  
Temperature Evolution ◽  
Lattice Temperature ◽  
Cw Laser ◽  
Si Films ◽  
Quartz Substrates

ABSTRACTAligned, coexisting liquid and solid regions are observed in cw laser annealing of polycrystalline Si films on quartz substrates. These stripe patterns are the precursors of surface topography that exists after cooling. It is proposed that a similar situation exists in the pulse annealing process. A calculation of the temperature evolution which assumes stripe symmetry and kinetic restraints of the crystallization process has been carried out. These calculations indicate a lattice temperature of between 1100 and 1300 K, 10 nsec after the sample has fully solidified.

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