Aligned, Coexisting Liquid and Solid Regions in Pulsed and CW Laser Annealing of Si

1982 ◽  
Vol 13 ◽  
Author(s):  
R. J. Nemanich ◽  
D. K. Biegelsen ◽  
W. G. Hawkins
Keyword(s):  
Surface Topography ◽  
Crystallization Process ◽  
Laser Annealing ◽  
Annealing Process ◽  
Temperature Evolution ◽  
Lattice Temperature ◽  
Cw Laser ◽  
Si Films ◽  
Quartz Substrates

ABSTRACTAligned, coexisting liquid and solid regions are observed in cw laser annealing of polycrystalline Si films on quartz substrates. These stripe patterns are the precursors of surface topography that exists after cooling. It is proposed that a similar situation exists in the pulse annealing process. A calculation of the temperature evolution which assumes stripe symmetry and kinetic restraints of the crystallization process has been carried out. These calculations indicate a lattice temperature of between 1100 and 1300 K, 10 nsec after the sample has fully solidified.

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

scholarly journals Time‐resolved and space‐resolved Si lattice‐temperature measurements during cw laser annealing of Si on sapphire

1984 ◽  
Vol 45 (6) ◽  
pp. 659-661 ◽  
Author(s):  
Kouichi Murakami ◽  
Yoshinori Tohmiya ◽  
Kôki Takita ◽  
Kohzoh Masuda
Keyword(s):  
Laser Annealing ◽  
Temperature Measurements ◽  
Lattice Temperature ◽  
Time Resolved ◽  
Cw Laser

Time-Resolved Si Lattic-Temperature Measurement on Wide Time Scale (10−9–100 sec.) During Laser Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
Kouichi Murakami ◽  
Hisayoshi Itoh ◽  
Yoshinori Tohmiya ◽  
Kōoki Takita ◽  
Kohzoh Masuda
Keyword(s):  
Refractive Index ◽  
Temperature Measurement ◽  
Time Scale ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Time Dependent ◽  
Lattice Temperature ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Cw Laser

ABSTRACTTime-resolved Si lattice-temperature measurement has been developed on wide time scale from 10−9 to 100 sec during laser annealing, by utilizing the time-dependent optical interference in Si on sappire. This interference is due to small changes in Si refractive index induced by temporal changes in Si lattice-temperature. For ns–pulsed laser annealing, part of the absorbed photon energy is found to be transferred into lattice (phonons) in a time much shorter than 40-ns pulse duration. A new method using a microscope is demonstrated for time- and space-resolved Si latticetemperature measurements during cw laser annealing.

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

2001 ◽  
Author(s):  
Seung-Jae Moon ◽  
Minghong Lee ◽  
Costas P. Grigoropoulos
Keyword(s):  
Laser Annealing ◽  
Thermal Emission ◽  
Electrical Conductance ◽  
Nanosecond Laser ◽  
Solidification Velocity ◽  
Emission Measurement ◽  
Excimer Laser Annealing ◽  
In Situ Experiments ◽  
Si Films

Abstract The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in situ experiments combining time-resolved (∼lns) thermal emission measurements, optical reflectance and transmittance at near-IR wavelengths and electrical conductance measurements. The spontaneous nucleation temperature in the supercooled liquid melt is studied from the thermal emission measurement A new double laser recrystallization technique using a temporally modulated CW Ar+ laser in conjunction with a superposed nanosecond laser pulse produces lateral grain growth at the irradiated spot. The laser melting process is numerically simulated. High-resolution laser flash photography enabled in-situ direct visualization of the resolidification process. The images reveal lateral solidification velocity of about 10 m/s.

scholarly journals A comparison between furnace and cw laser annealing of a-Si : evidence of different crystallization states

1982 ◽  
Vol 17 (12) ◽  
pp. 783-786 ◽  
Author(s):  
D. Bensahel ◽  
G. Auvert ◽  
Y. Pauleau ◽  
J.C. Pfister
Keyword(s):  
Laser Annealing ◽  
Cw Laser

CW laser annealing of boron implanted polycrystalline silicon

1985 ◽  
Vol 28 (4) ◽  
pp. 339-344 ◽  
Author(s):  
S. Peterström ◽  
G. Holmén ◽  
G. Alestig
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Cw Laser
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