Epitaxial Growth of 3C-SiC on a Si Substrate Using Methyltrichlorosilane

1989 ◽  
pp. 45-50 ◽  
Author(s):  
S. Nishino ◽  
J. Saraie
Keyword(s):  
Epitaxial Growth ◽  
Si Substrate

scholarly journals Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

2021 ◽  
Vol 11 (4) ◽  
pp. 1801
Author(s):  
Takuro Fujii ◽  
Tatsurou Hiraki ◽  
Takuma Aihara ◽  
Hidetaka Nishi ◽  
Koji Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Heterogeneous Integration ◽  
Selective Area Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Si Photonics ◽  
Selective Area ◽  
Area Growth ◽  
Indium Gallium

The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

Epitaxial growth of SiGe on Si substrate by printing and firing of Al–Ge mixed paste

2019 ◽  
Vol 58 (4) ◽  
pp. 045504 ◽  
Author(s):  
Shogo Fukami ◽  
Yoshihiko Nakagawa ◽  
Mel F. Hainey ◽  
Kazuhiro Gotoh ◽  
Yasuyoshi Kurokawa ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Si Substrate

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO 2 /Si Substrate

2019 ◽  
Vol 217 (3) ◽  
pp. 1900523 ◽  
Author(s):  
Claire Besancon ◽  
Nicolas Vaissiere ◽  
Cécilia Dupré ◽  
Frank Fournel ◽  
Loic Sanchez ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Si Substrate ◽  
High Quality ◽  
Active Structures

Epitaxial growth of Ba8Ga16Ge30 clathrate film on Si substrate by RF helicon magnetron sputtering with evaluation on thermoelectric properties

2007 ◽  
Vol 254 (1) ◽  
pp. 167-172 ◽  
Author(s):  
L. Miao ◽  
S. Tanemura ◽  
T. Watanabe ◽  
M. Tanemura ◽  
S. Toh ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Thermoelectric Properties ◽  
Si Substrate

Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH3-B2H6-H2System

1973 ◽  
Vol 12 (12) ◽  
pp. 1960-1961 ◽  
Author(s):  
Makoto Hirayama ◽  
Katsufusa Shohno
Keyword(s):  
Epitaxial Growth ◽  
Si Substrate ◽  
Boron Arsenide

Si substrate treatment with nitrogen for molecular beam epitaxial growth of ZnSe

1998 ◽  
Vol 34 (18) ◽  
pp. 1791 ◽  
Author(s):  
V.H. Méndez-García ◽  
M. López-López
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrate ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of GaN thin film on Si substrate with InN as interlayer

2006 ◽  
Vol 294 (2) ◽  
pp. 197-201 ◽  
Author(s):  
F.R. Hu ◽  
K. Ochi ◽  
Y. Zhao ◽  
B.S. Choi ◽  
K. Hane
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrate ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Epitaxial Growth of Highly Crystallized InSb films on Si Substrate by MBE and Their Devices Properties

2009 ◽  
Vol 1194 ◽  
Author(s):  
Yoshihisa Kunimi ◽  
Hiromi Fujita ◽  
Ayano Sakurai ◽  
Shinichiro Akiyama ◽  
Masatoshi Miyahara ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Film Growth ◽  
Wafer Surface ◽  
Cluster Beam ◽  
Si Substrate ◽  
Hydrogen Atoms ◽  
Rocking Curve ◽  
Hall Element ◽  
Si Wafer

AbstractHigh crystallized thin InSb epitaxial growth directly on Si substrate was investigated by molecular-beam epitaxy (MBE). Experimental results indicated that suppressing the desorption of hydrogen atoms which terminated the dangling bonds of Si wafer surface and incorporation of As around the interface between film and Si substrate were the most important to obtained high crystallized InSb film. It could be achieved by the irradiation of As4 cluster beam onto the Si wafer just before film growth. Obtained thin InSb film showed mirror like surface, and its thickness was 0.7 μm. Its electron mobility was 47,600 cm2/V-s, and FWHM of HR-XRD rocking curve was about 300 arcsec. This InSb film on Si wafer was applied to Hall element, and it passed ordinary reliability tests.

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