Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate

2000 ◽  
Author(s):  
Kiyotaka MIYANO ◽  
Ichiro MIZUSHIMA ◽  
Yoshitaka TSUNASHIMA
Keyword(s):  
Epitaxial Growth ◽  
Si Substrate ◽  
Selective Epitaxial Growth

MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

1988 ◽  
Vol 126 ◽  
Author(s):  
H. Noge ◽  
H. Kano ◽  
M. Hashimoto ◽  
I. Igarashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Hall Mobility ◽  
Molecular Beam ◽  
Gaas Layer ◽  
Si Substrate ◽  
Mbe Growth ◽  
Si Substrates ◽  
Selective Epitaxial Growth ◽  
Antiphase Domains

ABSTRACTGaAs layers free of antiphase domains (APD's) have been grown by molecular beam epitaxy (MBE) on nominally (001)-oriented Si substrates. This is achieved by preheating the substrates at 950°C over 60 min or at 1000°C over 5 min in an ultrahigh vacuum. The maximum Hall mobility at 293 K is 5300 cm2/Vs for the APD-free GaAs layer doped with Si at a concentration of 2×1016 cm−3. Selective epitaxial growth of GaAs has been carried out on a Si substrate pattrened with SiO2, which was formed by wet O2 oxidation. By choosing an appropriate thickness of the SiO2 layer, thzxcSe warpage of wafers can be reduced to zero. While single-crystalline GaAs is grown on Si-exposed areas, highly-resistive (p ≧ 105 Ωcm) poly-crystalline GaAs is deposited on SiO2. This technique has been successfully applied for the device isolation of modulation-doped FET's (MODFET's, HEMT's, etc.) on Si without mesa-etching. The transconductance of the MODFET with a 3 μm-long gate reaches 88 mS/mm at 293 K.

MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

1988 ◽  
Vol 116 ◽  
Author(s):  
H. Noge ◽  
H. Kano ◽  
M. Hashimoto ◽  
I. Igarashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Hall Mobility ◽  
Molecular Beam ◽  
Gaas Layer ◽  
Si Substrate ◽  
Mbe Growth ◽  
Si Substrates ◽  
Selective Epitaxial Growth ◽  
Antiphase Domains

AbstractGaAs layers free of antiphase domains (APD's) have been grown by molecular beam epitaxy (MBE) on nominally (001)-oriented Si substrates. This is achieved by preheating the substrates at 950 °C over 60 min or at 1000 °C over 5 min in an ultrahigh vacuum. The maximum Hall mobility at 293 K is 5300 cm2 /Vs for the APD-free GaAs layer doped with Si at a concentration of 2×1016 cm−3 . Selective epitaxial growth of GaAs has been carried out on a Si substrate pattrened with SiO2, which was formed by wet O2 oxidation. By choosing an appropriate thickness of the SiO2 layer, the warpage of wafers can be reduced to zero. While single-crystalline GaAs is grown on Si-exposed areas, highly-resistive (ρ ≧ 105 Ωcm) poly-crystalline GaAs is deposited on SiO2 . This technique has been successfully applied for the device isolation of modulation-doped FET's (MODFET's, HEMT's, etc.) on Si without mesa-etching. The transconductance of the MODFET with a 3 µm-long gate reaches 88 mS/mm at 293 K.

Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate

2002 ◽  
Vol 389-393 ◽  
pp. 331-334 ◽  
Author(s):  
Yoichi Okui ◽  
Chacko Jacob ◽  
Satoru Ohshima ◽  
Shigehiro Nishino
Keyword(s):  
Epitaxial Growth ◽  
Si Substrate ◽  
Selective Epitaxial Growth

Thick selective epitaxial growth of silicon at 960°C using silane only

1992 ◽  
Vol 18 (3) ◽  
pp. 237-246 ◽  
Author(s):  
N. Afshar-Hanaii ◽  
J.M. Bonar ◽  
A.G.R. Evans ◽  
G.J. Parker ◽  
C.M.K. Starbuck ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth

scholarly journals Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

2021 ◽  
Vol 11 (4) ◽  
pp. 1801
Author(s):  
Takuro Fujii ◽  
Tatsurou Hiraki ◽  
Takuma Aihara ◽  
Hidetaka Nishi ◽  
Koji Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Heterogeneous Integration ◽  
Selective Area Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Si Photonics ◽  
Selective Area ◽  
Area Growth ◽  
Indium Gallium

The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

Anisotropy effects during non-selective epitaxial growth of Si and SiGe materials

2011 ◽  
Vol 334 (1) ◽  
pp. 138-145 ◽  
Author(s):  
Clément Pribat ◽  
Didier Dutartre
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth
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