Characteristics of NdBa2Cu3O7-δ Josephson Junctions fabricated using a high resolution focused ion beam etching technique

1998 ◽  
pp. 1115-1118
Author(s):  
Katsu Ohnishi ◽  
Shinichi Morohashi ◽  
Tadashi Utagawa ◽  
Youichi Enomoto
Keyword(s):  
High Resolution ◽  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Technique ◽  
Ion Beam Etching

scholarly journals Planar S–F–S Josephson junctions made by focused ion beam etching

2005 ◽  
Vol 418 (1-2) ◽  
pp. 16-22 ◽  
Author(s):  
V.M. Krasnov ◽  
O. Ericsson ◽  
S. Intiso ◽  
P. Delsing ◽  
V.A. Oboznov ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Etching

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

The Novel Dopant Profile Inspection Methodology by FIB

2010 ◽  
Author(s):  
Po Fu Chou ◽  
Li Ming Lu
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Real Sample ◽  
Physical Analysis ◽  
The Novel ◽  
High Contrast ◽  
Dopant Profile ◽  
P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

scholarly journals High resolution magnetic force microscopy using focused ion beam modified tips

2002 ◽  
Vol 81 (5) ◽  
pp. 865-867 ◽  
Author(s):  
G. N. Phillips ◽  
M. Siekman ◽  
L. Abelmann ◽  
J. C. Lodder
Keyword(s):  
High Resolution ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Force Microscopy

Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching

2011 ◽  
Vol 7 (4) ◽  
pp. 594-597
Author(s):  
Zhan-Shuo Hu ◽  
Fei-Yi Hung ◽  
Shoou-Jinn Chang ◽  
Bohr-Ran Huang ◽  
Bo-Cheng Lin ◽  
...  
Keyword(s):  
Field Emission ◽  
Growth Mechanism ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Emission Characteristics ◽  
Ion Beam Etching

scholarly journals High-quality Au/BIG/GGG magnetoplasmonic crystals fabricated by a combined ion-beam etching technique

2015 ◽  
Vol 5 (7) ◽  
pp. 1647 ◽  
Author(s):  
A. L. Chekhov ◽  
V. L. Krutyanskiy ◽  
V. A. Ketsko ◽  
A. I. Stognij ◽  
T. V. Murzina
Keyword(s):  
Ion Beam ◽  
High Quality ◽  
Etching Technique ◽  
Ion Beam Etching
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