Combined Quantum Control of Electron-and Photon-Systems in Semiconductor Mesoscopic Structures: Toward an Ultimate Goal of Semiconductor Light Emitters

1992 ◽  
pp. 421-433
Author(s):  
Masamichi Yamanishi
Keyword(s):  
Quantum Control ◽  
Light Emitters ◽  
Electron And Photon

Radiation-induced surface decomposition

1983 ◽  
Vol 41 ◽  
pp. 368-369
Author(s):  
M. L. Knotek
Keyword(s):  
Ionizing Radiation ◽  
Atomic Structure ◽  
Chemical Bonding ◽  
Neutral Species ◽  
Radiation Induced ◽  
Physical And Chemical ◽  
Surface Decomposition ◽  
The Relationship ◽  
Electron And Photon ◽  
Surface Bond

Modern surface analysis is based largely upon the use of ionizing radiation to probe the electronic and atomic structure of the surfaces physical and chemical makeup. In many of these studies the ionizing radiation used as the primary probe is found to induce changes in the structure and makeup of the surface, especially when electrons are employed. A number of techniques employ the phenomenon of radiation induced desorption as a means of probing the nature of the surface bond. These include Electron- and Photon-Stimulated Desorption (ESD and PSD) which measure desorbed ionic and neutral species as they leave the surface after the surface has been excited by some incident ionizing particle. There has recently been a great deal of activity in determining the relationship between the nature of chemical bonding and its susceptibility to radiation damage.

ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters

2005 ◽  
Vol 892 ◽  
Author(s):  
Andrei Osinsky ◽  
Jianwei Dong ◽  
J. Q. Xie ◽  
B. Hertog ◽  
A. M. Dabiran ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Compositional Analysis ◽  
Optical Emission ◽  
Rf Plasma ◽  
Light Emitters ◽  
Time Resolved ◽  
Light Emitting ◽  
Spatially Resolved ◽  
Time Resolved Photoluminescence ◽  
Made In

AbstractThis paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.

INTEGRABILITY, ENTROPY AND QUANTUM COMPUTATION

1999 ◽  
Vol 10 (07) ◽  
pp. 1205-1228 ◽  
Author(s):  
E. V. KRISHNAMURTHY
Keyword(s):  
Quantum Computation ◽  
Quantum Chaos ◽  
Quantum Control ◽  
Dynamical Evolution ◽  
Open Problems ◽  
Quantum Integrability ◽  
Feynman Path Integrals ◽  
Exact Integrability ◽  
Time Arrow ◽  
Computational Systems

The important requirements are stated for the success of quantum computation. These requirements involve coherent preserving Hamiltonians as well as exact integrability of the corresponding Feynman path integrals. Also we explain the role of metric entropy in dynamical evolutionary system and outline some of the open problems in the design of quantum computational systems. Finally, we observe that unless we understand quantum nondemolition measurements, quantum integrability, quantum chaos and the direction of time arrow, the quantum control and computational paradigms will remain elusive and the design of systems based on quantum dynamical evolution may not be feasible.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

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