Technology Development and Innovation for Production of Next-Generation Biofuel from Lignocellulosic Wastes

2015 ◽  
pp. 315-350
Author(s):  
Vinod Kumar Sharma
Keyword(s):  
Technology Development ◽  
Next Generation ◽  
Lignocellulosic Wastes ◽  
Generation Biofuel

SiC High Temperature Electronics for Next Generation Aircraft Controls Systems

1996 ◽  
Author(s):  
John F. Perkins ◽  
Richard H. Hopkins ◽  
Charles D. Brandt ◽  
Anant K. Agarwal ◽  
Suresh Seshadri ◽  
...  
Keyword(s):  
High Temperature ◽  
High Speed ◽  
Technology Development ◽  
Temperature Tolerance ◽  
Oxide Semiconductor ◽  
Power Device ◽  
Next Generation ◽  
Power Devices ◽  
Basic Work ◽  
Aircraft Controls

Several organizations, including Westinghouse, CREE, and ATM, as well as researchers in Japan and Europe, are working to develop SiC power devices for reliable, high power and high temperature environments in military, industrial, utility, and automotive applications. Other organizations, such as NASA Lewis and several universities, are also doing important basic work on basic SiC technology development. It has been recognized for two decades that the superior properties of SiC lead to range of devices with higher power, greater temperature tolerance, and significantly more radiation hardness than silicon or GaAs. This combination of superior thermal and electrical properties results in SiC devices that can operate at up to ten times the power density of Si devices for a given volume. Recent research has focused on the development of vertical metal oxide semiconductor field effect transistor (VMOSFET) power device technology, and complementary high speed, temperature-tolerant rectifier-diodes for power applications. We are also evaluating applications for field control thyristors (FCT) and MOS turn-off thyristors (MTO). The technical issues to be resolved for these devices are also common to other power device structures. The present paper reviews the relative benefits of various power devices structures, with emphasis on how the special properties of SiC enhance the desirability of specific device configurations as compared to the Si-based versions of these devices. Progress in SiC material quality and recent power device research will be reviewed, and the potential for SiC-based devices to operate at much higher temperatures than Si-based devices, or with enhanced reliability at higher temperatures will be stressed. We have already demonstrated 1000V breakdown, current densities of 1 kA/cm2, and measurements up to 400°C in small diodes. The extension of this work will enable the implementation of highly distributed aircraft power control systems, as well as actuator and signal conditioning electronics for next generation engine sensors, by permitting electronic circuits, sensors and smart actuators to be mounted on or at the engine.

0408 Advanced Technology Development for the Next Generation Gas Turbine

2007 ◽  
Vol 2007.3 (0) ◽  
pp. 1-2
Author(s):  
Eisaku ITO ◽  
Keizou TSUKAGOSHI ◽  
Akimasa MUYAMA ◽  
Junichirou MASADA ◽  
Ikuo OKADA ◽  
...  
Keyword(s):  
Gas Turbine ◽  
Technology Development ◽  
Advanced Technology ◽  
Next Generation

Toward the Next Generation Micro-Nanosystems: Technology and Industry Development in Japan

2007 ◽  
Author(s):  
Junji Adachi ◽  
Shunichi Adegawa ◽  
Keiichi Aoyagi
Keyword(s):  
Technology Development ◽  
Rapid Expansion ◽  
Mems Devices ◽  
Next Generation ◽  
National Project ◽  
Industry Development ◽  
Development Organization ◽  
New Energy ◽  
Cmos Mems ◽  
The Government

MEMS industry in Japan has successfully taken off and been expected its rapid expansion, and is classified as a priority technology in the 3rd Science and Technology Basic Plan. Further involvement from the government in support technology development and commercialization is essential to achieve competitive advantage of the industry. In relation with the large anticipation of MEMS industry, Micromachine Center recently launched MEMS Industry Forum (MIF) in order to support MEMS industry development in collaboration with the government, the academia and the industry. Primary activities of MIF are policies proposal to the government, supporting the national project implementation, education, MEMS foundry service network and so on. The new national project, conducted by New Energy and Industrial Technology development Organization (NEDO), launched in July, 2006. The project focuses upon technology development on highly integrated MEMS, such as MEMS/MEMS, CMOS/MEMS and Nano/MEMS integrations, and its final goal is to commercialize the next generation MEMS devices and systems in five to ten years.

Quantitative proteomics reveals dynamic responses of Synechocystis sp. PCC 6803 to next-generation biofuel butanol

2013 ◽  
Vol 78 ◽  
pp. 326-345 ◽  
Author(s):  
Xiaoxu Tian ◽  
Lei Chen ◽  
Jiangxin Wang ◽  
Jianjun Qiao ◽  
Weiwen Zhang
Keyword(s):  
Quantitative Proteomics ◽  
Dynamic Responses ◽  
Next Generation ◽  
Generation Biofuel ◽  
Synechocystis Sp ◽  
Pcc 6803
Sign in / Sign up

Export Citation Format

Share Document