Data Interpretation from a Transportable Laboratory in a Complex Coastal Site

1990 ◽  
pp. 541-543
Author(s):  
J. Plaza ◽  
M. D. Andrés ◽  
M. Martin ◽  
M. Millán
Keyword(s):  
Data Interpretation ◽  
Coastal Site

High Resolution Microscopy of Multi-Layered Biological Crystals

1982 ◽  
Vol 40 ◽  
pp. 80-83
Author(s):  
H.A. Cohen ◽  
T.W. Jeng ◽  
W. Chiu
Keyword(s):  
High Resolution ◽  
Low Dose ◽  
Three Dimensional ◽  
Data Interpretation ◽  
Two Dimensional ◽  
Biological Objects ◽  
Density Maps ◽  
Density Map ◽  
Complex Crystal ◽  
High Resolution Microscopy

This tutorial will discuss the methodology of low dose electron diffraction and imaging of crystalline biological objects, the problems of data interpretation for two-dimensional projected density maps of glucose embedded protein crystals, the factors to be considered in combining tilt data from three-dimensional crystals, and finally, the prospects of achieving a high resolution three-dimensional density map of a biological crystal. This methodology will be illustrated using two proteins under investigation in our laboratory, the T4 DNA helix destabilizing protein gp32*I and the crotoxin complex crystal.

OZONE POLLUTION AND THE EFFECTS ON CROP YIELDS AT A COASTAL SITE IN THE YANGTZE DELTA

2013 ◽  
Vol 12 (12) ◽  
pp. 2331-2337
Author(s):  
Wenpo Shan ◽  
Haixia Lu ◽  
Pengyan Liu ◽  
Zhanchen Li ◽  
Da Lu ◽  
...  
Keyword(s):  
Crop Yields ◽  
Ozone Pollution ◽  
Yangtze Delta ◽  
Coastal Site

GPR data interpretation by the deep learning with coloring data

2019 ◽  
Vol 72 (0) ◽  
pp. 68-77
Author(s):  
Shinichiro Iso ◽  
Kazuya Ishitsuka ◽  
Kyosuke Onishi ◽  
Toshifumi Matsuoka
Keyword(s):  
Deep Learning ◽  
Data Interpretation

Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI Microprocessors

2006 ◽  
Author(s):  
Vinod Narang ◽  
P. Muthu ◽  
J.M. Chin ◽  
Vanissa Lim
Keyword(s):  
Plasma Etching ◽  
Data Interpretation ◽  
Parameters Optimization ◽  
Scanning Capacitance Microscopy ◽  
Microscopy Technique ◽  
Thermal Oxide ◽  
Specific Analysis ◽  
Thin Oxide ◽  
P Type ◽  
Uv Ozone

Abstract Implant related issues are hard to detect with conventional techniques for advanced devices manufactured with deep sub-micron technology. This has led to introduction of site-specific analysis techniques. This paper presents the scanning capacitance microscopy (SCM) technique developed from backside of SOI devices for packaged products. The challenge from backside method includes sample preparation methodology to obtain a thin oxide layer of high quality, SCM parameters optimization and data interpretation. Optimization of plasma etching of buried oxide followed by a new method of growing thin oxide using UV/ozone is also presented. This oxidation method overcomes the limitations imposed due to packaged unit not being able to heat to high temperature for growing thermal oxide. Backside SCM successfully profiled both the n and p type dopants in both cache and core transistors.

Auto-Metrology on TEM Images of FinFET

2014 ◽  
Author(s):  
Sajal Biring
Keyword(s):  
Data Analysis ◽  
Data Interpretation ◽  
Visual Judgment ◽  
Manual Measurement ◽  
Size And Shape ◽  
Highly Sensitive ◽  
Edge Detecting ◽  
Geometrical Data ◽  
Precision And Accuracy ◽  
Device Size

Abstract The FinFET has been introduced in the last decade to provide better transistor performance as the device size shrinks. The performance of FinFET is highly sensitive to the size and shape of the fin, which needs to be optimized with tighter control. Manual measurement of nano-scale features on TEM images of FinFET is not only a time consuming and tedious task, but also prone to error owing to visual judgment. Here, an auto-metrology approach is presented to extract the measured values with higher precision and accuracy so that the uncertainty in the manual measurement can be minimized. Firstly, a FinFET TEM image is processed through an edge detecting algorithm to reveal the fin profile precisely. Finally, an algorithm is utilized to calculate out the required geometrical data relevant to the FinFET parameters and summarizes them to a table or plots a graph based on the purpose of data interpretation. This auto-metrology approach is expected to be adopted by academia and/or industry for proper data analysis and interpretation with higher precision and efficiency.

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