Near Surface State in Si and Their Possible Role in the Luminescence of Porous Silicon

Author(s):  
D. Bois ◽  
J. M. Debever
2002 ◽  
Vol 743 ◽  
Author(s):  
Hideki Hasegawa ◽  
Tamotsu Hashizume

ABSTRACTThis paper reviews the authors′ recent efforts to clarify the properties of electronic states near surfaces of GaN and AlGaN by using variousin-situandex-situcharacterization techniques, including UHV contact-less C-V, photoluminescence surface state spectroscopy (PLS3), cathode luminescence in-depth spectroscopy (CLIS),and gateless FET techniques that have been developed by the authors’ group.As a result, a model including a U-shaped surface state continuum, having a particular charge neutrality level, combined with frequent appearance of near-surface N-vacancy related deep donor states having a discrete level at Ec - 0.37eV is proposed as a unified model that can explain large gate leakage currents and current collapse in AlGaN/GaN HFETs. Hydrogen plasma treatment and SiO2deposition increase N-vacancy related deep donors. Reasonably good surface passivation can be achieved by ECR-plasma SiNx films and by ECR-plasma oxidized Al2O3films both combined with ECR N2plasma treatment.


2004 ◽  
Vol 5 (6) ◽  
pp. 1034-1048 ◽  
Author(s):  
Paul A. Dirmeyer ◽  
Mei Zhao

Abstract The potential role of the land surface state in improving predictions of seasonal climate is investigated with a coupled land–atmosphere climate model. Climate simulations for 18 boreal-summer seasons (1982–99) have been conducted with specified observed sea surface temperature (SST). The impact on prediction skill of the initial land surface state (interannually varying versus climatological soil wetness) and the effect of errors in downward surface fluxes (precipitation and longwave/shortwave radiation) over land are investigated with a number of parallel experiments. Flux errors are addressed by replacing the downward fluxes with observed values in various combinations to ascertain the separate roles of water and energy flux errors on land surface state variables, upward water and energy fluxes from the land surface, and the important climate variables of precipitation and near-surface air temperature. Large systematic errors are found in the model, which are only mildly alleviated by the specification of realistic initial soil wetness. The model shows little skill in simulating seasonal anomalies of precipitation, but it does have skill in simulating temperature variations. Replacement of the downward surface fluxes has a clear positive impact on systematic errors, suggesting that the land–atmosphere feedback is helping to exacerbate climate drift. Improvement in the simulation of year-to-year variations in climate is even more evident. With flux replacement, the climate model simulates temperature anomalies with considerable skill over nearly all land areas, and a large fraction of the globe shows significant skill in the simulation of precipitation anomalies. This suggests that the land surface can communicate climate anomalies back to the atmosphere, given proper meteorological forcing. Flux substitution appears to have the largest benefit to improving precipitation skill over the Northern Hemisphere midlatitudes, whereas use of realistic land surface initial conditions improves skill to significant levels over regions of the Southern Hemisphere. Correlations between sets of integrations show that the model has a robust and systematic global response to SST anomalies.


2019 ◽  
Vol 33 (16) ◽  
pp. 181-189
Author(s):  
Josefine H. Selj ◽  
Annett Tho̸gersen ◽  
Paul Bergstrom ◽  
Sean Erik Foss ◽  
Erik Stensrud Marstein

ChemInform ◽  
2010 ◽  
Vol 33 (21) ◽  
pp. no-no
Author(s):  
Klaus Adlkover ◽  
Eric F. Duijs ◽  
Frank Findeis ◽  
Max Bichler ◽  
Artur Zrenner ◽  
...  

1994 ◽  
Vol 10 (08) ◽  
pp. 737-740
Author(s):  
Li Jing-Jian ◽  
◽  
Diao Peng ◽  
Cai Sheng-Min ◽  
Hou Yong-Tian ◽  
...  
Keyword(s):  

2020 ◽  
Vol 65 (1) ◽  
pp. 75
Author(s):  
O. I. Zavalistyi ◽  
O. V. Makarenko ◽  
V. A. Odarych ◽  
A. L. Yampolskyi

A prolonged stay of porous silicon in the air environment gives rise to structural changes in its surface layer, and the standard single-layer model is not sufficiently accurate to describe them. In this work, the structure of the near-surface layer in porous silicon is studied using the polygonal ellipsometry method. A combined approach is proposed to analyze the angular ellipsometry data for the parameters ф and Δ. It consists in the application of the multilayer medium model and the matrix method, while simulating the propagation of optical radiation in this medium in order to obtain the theoretical angular dependences of tan ф and cosΔ. In this method, the dependence of the sought optical profile on the specimen depth is an additional condition imposed on the multilayer model. Evolutionary numerical methods are used for finding the global minimum of the mean squared error (MSE) between the corresponding theoretical and experimental dependences, and the parameters of an optical profile are determined. A model in which the inner non-oxidized layer of porous silicon is homogeneous, whereas the refractive index in the outer oxidized layer has a linear profile, is analyzed. It is shown that the linear and two-step models for the refractive index of an oxidized film provided the best agreement with the experimental ellipsometric functions. The adequacy of the theoretical model is also confirmed by determining the color coordinates of the specimen.


2004 ◽  
Vol 95 (2) ◽  
pp. 490-496 ◽  
Author(s):  
Tilghman L. Rittenhouse ◽  
Paul W. Bohn ◽  
Tim K. Hossain ◽  
Ilesanmi Adesida ◽  
James Lindesay ◽  
...  

1994 ◽  
Vol 01 (04) ◽  
pp. 585-588
Author(s):  
M. CAVANAGH ◽  
J.R. POWER ◽  
J.F. McGILP ◽  
H. MÜNDER ◽  
M.G. BERGER

The origin of the luminescence from porous Si (PS) is currently under intense scrutiny. Characterisation of this material on the atomic scale is difficult and optical techniques offer certain advantages. Ultrahigh vacuum studies of PS by optical second-harmonic generation (SHG) are presented. Excitation wavelengths corresponding to surface state and a suspected strain resonance from clean Si surfaces are used. Hydrogen-terminated and clean surfaces of Si(100) and PS are compared. The H-terminated surfaces give no signal under the excitation conditions used. On desorbing the hydrogen, a stable SH signal is obtained from the PS which has polarisation dependences different to those of clean Si(100), and which also differ between the surface and strain resonances.


1992 ◽  
Vol 283 ◽  
Author(s):  
J. D. L'ecuyer ◽  
J. P. G. Farr

ABSTRACTThe I-V and impedance characteristics of p and n-type silicon electrodes in HF solutions have been determined. Three different I-V regimes are observed, one of which is associated with the on-set of localized dissolution. The formation of porous silicon takes place via a surface state mediated charge transfer mechanism. The position of the main recombination-generation center is estimated at 400 mV above the valence band edge. Localized dissolution is initiated at or close to active adsorption sites. It is then favoured because of geometrical field enhancement effects. Porous silicon has a surface chemistry that can be significant in luminescence.


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