Geometry Scaling Impact on Leakage Currents in FinFET Standard Cells Based on a Logic-Level Leakage Estimation Technique

Author(s):  
Zia Abbas ◽  
Andleeb Zahra ◽  
Mauro Olivieri ◽  
Antonio Mastrandrea
2021 ◽  
Vol 11 (15) ◽  
pp. 7143
Author(s):  
Bijan Fadaeinia ◽  
Thorben Moos ◽  
Amir Moradi

The imbalance of the currents leaked by CMOS standard cells when different logic values are applied to their inputs can be exploited as a side channel to recover the secrets of cryptographic implementations. Traditional side-channel countermeasures, primarily designed to thwart the dynamic leakage behavior, were shown to be much less powerful against this static threat. Thus, a special protection mechanism called Balanced Static Power Logic (BSPL) has been proposed very recently. Essentially, fundamental standard cells are re-designed to balance their drain-source leakage current independent of the given input. In this work, we analyze the BSPL concept in more detail and reveal several design issues that limit its effectiveness as a universal logic library. Although balancing drain-source currents remains a valid approach even in more advanced technology generations, we show that it is conceptually insufficient to achieve a fully data-independent leakage behavior in smaller geometries. Instead, we suggest an alternative approach, so-called improved BSPL (iBSPL). To evaluate the proposed method, we use information theoretic analysis. As an attack strategy, we have chosen Moments-Correlating DPA (MCDPA), since this analysis technique does not depend on a particular leakage model and allows a fair comparison. Through these evaluation methods, we show iBSPL demands fewer resources and delivers better balance in the ideal case as well as in the presence of process variations.


1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.


Author(s):  
R. Rosenkranz ◽  
W. Werner

Abstract In many cases of failure localization, passive voltage contrast (PVC) localization method does not work, because it is not possible to charge up conducting structures which supposed to be dark in the SEM and FIB images. The reason for this is leakage currents. In this article, the authors show how they succeeded in overcoming these difficulties by the application of the active voltage contrast (AVC) method as it was described as biased voltage contrast by Campbell and Soden. They identified three main cases where the PVC didn't work but where they succeeded in failure localization with the AVC method. This is illustrated with the use of two case studies. Compared to the optical beam based methods the resolution is much better so a single failing contact of e.g. 70 nm technology can clearly be identified which cannot be done by TIVA or OBIRCH.


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