Comparative Studies on the Performance Parameters of a P-Channel Tunnel Field Effect Transistor Using Different Channel Materials for Low-Power Digital Application

2018 ◽  
pp. 49-56
Author(s):  
Jayabrata Goswami ◽  
Anuva Ganguly ◽  
Anirudhha Ghosal ◽  
J. P. Banerjee
Keyword(s):  
Low Power ◽  
Comparative Studies ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Performance Parameters ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

Heterogate junctionless tunnel field-effect transistor: future of low-power devices

2016 ◽  
Vol 16 (1) ◽  
pp. 30-38 ◽  
Author(s):  
Shiromani Balmukund Rahi ◽  
Pranav Asthana ◽  
Shoubhik Gupta
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Power Devices ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Analogue/RF performance attributes of underlap tunnel field effect transistor for low power applications

2016 ◽  
Vol 52 (7) ◽  
pp. 559-560 ◽  
Author(s):  
V. Vijayvargiya ◽  
B.S. Reniwal ◽  
P. Singh ◽  
S.K. Vishvakarma
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Rf Performance
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