Comparative Studies on the Performance Parameters of a P-Channel Tunnel Field Effect Transistor Using Different Channel Materials for Low-Power Digital Application

2018 ◽  
pp. 49-56
Author(s):  
Jayabrata Goswami ◽  
Anuva Ganguly ◽  
Anirudhha Ghosal ◽  
J. P. Banerjee
Keyword(s):  
Low Power ◽  
Comparative Studies ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Performance Parameters ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

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