Silicon-On-Insulator Photonics Waveguide Design for Near-IR Evanescent Field-Based Blood Sensor

2021 ◽  
pp. 229-237
Author(s):  
Veer Chandra ◽  
Neha Choudhary ◽  
Rakesh Ranjan
Keyword(s):  
Evanescent Field ◽  
Silicon On Insulator ◽  
Near Ir ◽  
Waveguide Design ◽  
Blood Sensor

scholarly journals Comparative Study of Nano-Slot Silicon Waveguides Covered by Dye Doped and Undoped Polymer Cladding

2018 ◽  
Vol 9 (1) ◽  
pp. 89 ◽  
Author(s):  
Siegfried Bondarenko ◽  
Claus Villringer ◽  
Patrick Steglich
Keyword(s):  
High Performance ◽  
Nonlinear Optical ◽  
Structural Parameters ◽  
Polymer System ◽  
Silicon On Insulator ◽  
Slot Waveguide ◽  
Optical Modulators ◽  
Optical Polymer ◽  
Waveguide Design ◽  
Cladding Material

Nonlinear optical dyes doped in optical polymer matrices are widely used for electro-optical devices. Linear optical properties change with dye concentration, which leads to a change in modal properties, especially in nano-structured integrated waveguides such as silicon slot-waveguides. Here, we investigate the influence of a nonlinear optical dye on the performance of a silicon-organic hybrid slot-waveguide. A simulation study of the modal and optical confinement properties is carried out and dependence of the structural parameters of the slot-waveguide and the organic cladding material is taken into account. As cladding material, a guest-host polymer system is employed comprising the nonlinear optical dye Disperse Red 1 (DR1) doped in a poly[methyl methacrylate] (PMMA) matrix. The refractive indices of doped and undoped PMMA were deduced from ellipsometric data. We present a guideline for an optimized slot-waveguide design for the fabrication in silicon-on-insulator technology giving rise to scalable, high-performance integrated electro-optical modulators.

Evanescent field waveguide sensing with subwavelength grating structures in silicon-on-insulator

2014 ◽  
Vol 39 (15) ◽  
pp. 4442 ◽  
Author(s):  
J. Gonzalo Wangüemert-Pérez ◽  
Pavel Cheben ◽  
Alejandro Ortega-Moñux ◽  
Carlos Alonso-Ramos ◽  
Diego Pérez-Galacho ◽  
...  
Keyword(s):  
Evanescent Field ◽  
Silicon On Insulator ◽  
Subwavelength Grating

scholarly journals Polarization-Insensitive Hybrid Plasmonic Waveguide Design for Evanescent Field Absorption Gas Sensor

2020 ◽  
Author(s):  
Nikolay Lvovich Kazanskiy ◽  
Svetlana Nikolaevna Khonina ◽  
Muhammad Ali Butt
Keyword(s):  
Gas Sensing ◽  
Transverse Magnetic ◽  
Evanescent Field ◽  
Plasmonic Waveguide ◽  
Hybrid Mode ◽  
Hybrid Plasmonic Waveguide ◽  
Sensing Applications ◽  
Highly Sensitive ◽  
Polarization Insensitive ◽  
Waveguide Design

Abstract We propose a polarization-insensitive design of a hybrid plasmonic waveguide (HPWG) optimized at the 3.392 µm wavelength which corresponds to the absorption line of methane gas. The waveguide design is capable of providing high mode sensitivity (Smode) and evanescent field ratio (EFR) for both transverse electric (TE) and transverse magnetic (TM) hybrid modes. The modal analysis of the waveguide is performed via 2-dimension (2D) and 3-dimension (3D) finite element methods (FEMs). At optimized waveguide parameters, Smode and EFR of 0.94 and 0.704, can be obtained for the TE hybrid mode, respectively, whereas the TM hybrid mode can offer Smode and EFR of 0.86 and 0.67, respectively. The TE and TM hybrid modes power dissipation of ~3 dB can be obtained for a 20-µm-long hybrid plasmonic waveguide at the 60% gas concentration. We believe that the highly sensitive waveguide scheme proposed in this work overcomes the limitation of the polarization controlled light and can be utilized in gas sensing applications.

scholarly journals Silicon-on-Insulator Slot-waveguide Design Trade-offs

2015 ◽  
Author(s):  
Patrick Steglich ◽  
Claus Villringer ◽  
Silvio Dümecke ◽  
Yazmin Padilla Michel ◽  
Mauro Casalboni ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Slot Waveguide ◽  
Trade Offs ◽  
Waveguide Design

scholarly journals Зависимость люминесцентных свойств упорядоченных групп Ge(Si) наноостровков от параметров ямок на структурированной поверхности подложки "кремний на изоляторе"

2021 ◽  
Vol 55 (12) ◽  
pp. 1210
Author(s):  
Ж.В. Смагина ◽  
В.А. Зиновьев ◽  
М.В. Степихова ◽  
А.В. Перетокин ◽  
С.А. Дьяков ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Room Temperature ◽  
Silicon On Insulator ◽  
Luminescence Signal ◽  
Patterned Substrate ◽  
Near Ir ◽  
Spatial Ordering ◽  
Two Dimensional Photonic Crystal ◽  
Si Quantum Dots ◽  
Insulator Substrate

This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which a pit-patterned surface of silicon on insulator substrate served both for the spatial ordering of QDs and for the formation of a two-dimensional photonic crystal. It is shown that by choosing the parameters of pit-patterned substrate (the diameter of the pits and the period of their location), it is possible to provide a significant increase of intensity of the QD luminescence signal in the near-IR range. This enhancement is associated with interaction of spatially ordered QD emission with the modes of a photonic crystal formed by the pattern of pits. The effect of amplification of the luminescence signal persists up to room temperature.

A Silicon-on-Insulator Photonic Wire Based Evanescent Field Sensor

2006 ◽  
Vol 18 (23) ◽  
pp. 2520-2522 ◽  
Author(s):  
A. Densmore ◽  
E. Post ◽  
D.-X. Xu ◽  
P. Waldron ◽  
S. Janz ◽  
...  
Keyword(s):  
Evanescent Field ◽  
Silicon On Insulator ◽  
Field Sensor ◽  
Photonic Wire

scholarly journals A Tellurium Oxide Microcavity Resonator Sensor Integrated On-Chip with a Silicon Waveguide

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 4061
Author(s):  
Henry Frankis ◽  
Daniel Su ◽  
Dawson Bonneville ◽  
Jonathan Bradley
Keyword(s):  
Oxide Film ◽  
Silicon Photonics ◽  
Limit Of Detection ◽  
Thermal Sensitivity ◽  
Evanescent Field ◽  
Silicon On Insulator ◽  
Cavity Resonance ◽  
Tellurium Oxide ◽  
Sensing Applications ◽  
On Chip

We report on thermal and evanescent field sensing from a tellurium oxide optical microcavity resonator on a silicon photonics platform. The on-chip resonator structure is fabricated using silicon-photonics-compatible processing steps and consists of a silicon-on-insulator waveguide next to a circular trench that is coated in a tellurium oxide film. We characterize the device’s sensitivity by both changing the temperature and coating water over the chip and measuring the corresponding shift in the cavity resonance wavelength for different tellurium oxide film thicknesses. We obtain a thermal sensitivity of up to 47 pm/°C and a limit of detection of 2.2 × 10−3 RIU for a device with an evanescent field sensitivity of 10.6 nm/RIU. These results demonstrate a promising approach to integrating tellurium oxide and other novel microcavity materials into silicon microphotonic circuits for new sensing applications.

Sign in / Sign up

Export Citation Format

Share Document