Near-IR and mid-IR (1.55 μm – 2 μm) silicon photonics devices on silicon-on-insulator (SOI) platform

AbstractWe introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform unconstrained by crystalline symmetries. The designs proposed advantageously leverage the large, complete, and isotropic photonic band gaps provided by hyperuniform disordered structures. An integrated design for a compact, sub-volt, sub-fJ/bit, hyperuniform-clad, electrically controlled resonant optical modulator suitable for fabrication in the silicon photonics ecosystem is presented along with simulation results. We also report results for passive device elements, including waveguides and resonators, which are seamlessly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers. We show that the hyperuniform-disordered platform enables improved compactness, enhanced energy efficiency, and better temperature stability compared to the silicon photonics devices based on rib and strip waveguides.

Download Full-text

Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac465b ◽

2021 ◽

Author(s):

Yutaka Makihara ◽

Moataz Eissa ◽

Tomohiro AMEMIYA ◽

Nobuhiko Nishiyama

Keyword(s):

Phase Shift ◽

Coupling Coefficient ◽

Integrated Circuit ◽

Silicon Photonics ◽

Silicon On Insulator ◽

Zehnder Interferometer ◽

Directional Couplers ◽

Photonic Integrated Circuit ◽

Active Elements ◽

Measurement Results

Abstract To achieve a reconfigurable photonic integrated circuit with active elements, we proposed a reflectivity tunable mirror constructed using a Mach–Zehnder interferometer (MZI) with a micro heater and loop waveguide on a silicon photonics platform. In this paper, the principle of the operation, design, fabrication, and measurement results of the mirror are presented. In theory, the phase shift dependence of the mirror relies on the coupling coefficient of the directional couplers of the MZI. When the coupling coefficient κ2 was 0.5 and 0.15, the reflection could be turned on and off with a phase shift of π/2 and π, respectively. The reflection power of the fabricated mirror on the silicon on insulator (SOI) substrate was changed by more than 20 dB by a phase shift. In addition, it was demonstrated that the phase shift dependence of the mirror changes with the coupling coefficient of the fabricated devices.

Download Full-text

Silicon Photonics Devices Based on SOI Structures

ECS Transactions ◽

10.1149/1.3570800 ◽

2019 ◽

Vol 35 (5) ◽

pp. 227-236 ◽

Cited By ~ 1

Author(s):

Seiichi Itabashi ◽

Koji Yamada ◽

Hiroshi Fukuda ◽

Tai Tsuchizawa ◽

Toshifume Watanabe ◽

...

Keyword(s):

Silicon Photonics ◽

Photonics Devices

Download Full-text

Tailoring the Response of Silicon Photonics Devices

2006 IEEE LEOS Annual Meeting Conference Proceedings ◽

10.1109/leos.2006.279093 ◽

2006 ◽

Author(s):

G. Reed ◽

F. Gardes ◽

B. Timotijevic ◽

W. Headley ◽

G. Mashanovich

Keyword(s):

Silicon Photonics ◽

Photonics Devices

Download Full-text

Design and Performance Evaluation of Multi-Gb/s Silicon Photonics Transmitters for High Energy Physics

Energies ◽

10.3390/en13143569 ◽

2020 ◽

Vol 13 (14) ◽

pp. 3569

Author(s):

Simone Cammarata ◽

Gabriele Ciarpi ◽

Stefano Faralli ◽

Philippe Velha ◽

Guido Magazzù ◽

...

Keyword(s):

Silicon Photonics ◽

Particle Physics ◽

High Energy Physics ◽

Current Mode ◽

High Energy ◽

Silicon On Insulator ◽

Output Stage ◽

Optical Links ◽

And Performance ◽

Energy Physics

Optical links are rapidly becoming pervasive in the readout chains of particle physics detector systems. Silicon photonics (SiPh) stands as an attractive candidate to sustain the radiation levels foreseen in the next-generation experiments, while guaranteeing, at the same time, multi-Gb/s and energy-efficient data transmission. Integrated electronic drivers are needed to enable SiPh modulators’ deployment in compact on-detector front-end modules. A current-mode logic-based driver harnessing a pseudo-differential output stage is proposed in this work to drive different types of SiPh devices by means of the same circuit topology. The proposed driver, realized in a 65 nm bulk technology and already tested to behave properly up to an 8 MGy total ionizing dose, is hybridly integrated in this work with a lumped-element Mach–Zehnder modulator (MZM) and a ring modulator (RM), both fabricated in a 130 nm silicon-on-insulator (SOI) process. Bit-error-rate (BER) performances confirm the applicability of the selected architecture to either differential and single-ended loads. A 5 Gb/s data rate, in line with the current high energy physics requirements, is achieved in the RM case, while a packaging-related performance degradation is captured in the MZM-based system, confirming the importance of interconnection modeling.

Download Full-text