Excimer-laser-assisted RF glow-discharge deposition of amorphous and microcrystalline silicon thin films

1994 ◽  
Vol 58 (5) ◽  
pp. 507-512 ◽  
Author(s):  
N. Layadi ◽  
P. Roca i Cabarrocas ◽  
M. Gerri ◽  
W. Marine ◽  
J. Spousta
Keyword(s):  
Thin Films ◽  
Glow Discharge ◽  
Excimer Laser ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Rf Glow Discharge ◽  
Glow Discharge Deposition

Influence of Hydrogen Dilution on Properties of Silicon Films Prepared by D.C. Saddle-Field Glow-Discharge: Observation of Microcrystallinity

2003 ◽  
Vol 762 ◽  
Author(s):  
T. Allen ◽  
I. Milostnaya ◽  
D. Yeghikyan ◽  
K. Leong ◽  
F. Gaspari ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Gas Phase ◽  
Volume Fraction ◽  
Average Crystallite Size ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Silane Concentration ◽  
Glow Discharge Deposition

AbstractIn the D.C. saddle field glow discharge deposition the transition from amorphous to microcrystalline silicon thin films occurs when the silane concentration in the gas phase drops below 10%. We report here the results of Raman spectroscopy, SEM, TEM, and HRTEM studies of the film morphology. We estimate the average crystallite size to be in the range of 5 to 7 nm and the crystalline volume fraction of 25 to 35%.

Intentional Reconstruction of Silicon Network on the Surface and within Sub-Surface by H and Ar

1997 ◽  
Vol 467 ◽  
Author(s):  
W. Futako ◽  
K. Fukutani ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
Glow Discharge ◽  
Thin Layer ◽  
Defect Density ◽  
Hydrogen Atoms ◽  
Silicon Thin Films ◽  
Chemical Annealing ◽  
Rf Glow Discharge ◽  
Wide Gap ◽  
The Stability

ABSTRACTSilicon thin films were prepared by “Chemical Annealing” where the deposition of thin layer (<3 nm thick) by RF glow discharge of SiH4 and the treatment with hydrogen atoms (H) or triplet state of argon (3Ar) were repeated alternatating. Consequently, wide gap a-Si:H with the gap of 2.1 eV was made by H-treatmentat rather low substrate temperature (Ts<150 °C), while a-Si:H with the gap narrower than 1.6 eV was obtained by the treatment with 3Ar at high Ts (>300 °C), resulting from the release of excessive hydrogen. Both the wider or the narrower gap films exhibited low defect density lower than 1016 cm−3 and obvious improvements in the stability for light soaking.

Preparation of Polycrystalline Silicon Thin Films by Cathode-Type RF Glow Discharge Method

1993 ◽  
Vol 32 (Part 1, No. 9A) ◽  
pp. 3729-3733 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka
Keyword(s):  
Thin Films ◽  
Glow Discharge ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films ◽  
Rf Glow Discharge ◽  
Discharge Method
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