Synchronization of gas-laser modes during modulation of the dielectric constant of the medium

1970 ◽  
Vol 13 (8) ◽  
pp. 997-1001
Author(s):  
Yu. P. Egorov ◽  
A. S. Petrov

1967 ◽  
Vol 7 (5) ◽  
pp. 449-451 ◽  
Author(s):  
D. V. Gordeev ◽  
E. P. Ostapchenko ◽  
V. A. Perebyakin ◽  
G. S. Sedov


Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).



2020 ◽  
Vol 8 (32) ◽  
pp. 16661-16668
Author(s):  
Huayao Tu ◽  
Shouzhi Wang ◽  
Hehe Jiang ◽  
Zhenyan Liang ◽  
Dong Shi ◽  
...  

The carbon fiber/metal oxide/metal oxynitride layer sandwich structure is constructed in the electrode to form a mini-plate capacitor. High dielectric constant metal oxides act as dielectric to increase their capacitance.



Author(s):  
Peng Wang ◽  
Zhongbin Pan ◽  
Weilin Wang ◽  
Jianxu Hu ◽  
Jinjun Liu ◽  
...  

High-performance electrostatic capacitors are in urgent demand owing to the rapidly development of advanced power electronic applications. However, polymer-based composite films with both high breakdown strength (Eb) and dielectric constant...



1965 ◽  
Vol 26 (11) ◽  
pp. 620-626 ◽  
Author(s):  
J.P. Russell
Keyword(s):  


1966 ◽  
Vol 88 (4) ◽  
pp. 753-756
Author(s):  
T.S. Velichkina ◽  
O.A. Shustin ◽  
Ivan A. Yakovlev
Keyword(s):  


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