Controlable diffusion parameters with chemical vapour deposition for p-n junction silicon solar cells

1990 ◽  
Vol 25 (4) ◽  
pp. 2077-2081
Author(s):  
M. B. Saleh ◽  
M. R. M. Rizk ◽  
N. G. Gomaa
2020 ◽  
Vol 705 ◽  
pp. 137978 ◽  
Author(s):  
Edris Khorani ◽  
Tudor E. Scheul ◽  
Antulio Tarazona ◽  
John Nutter ◽  
Tasmiat Rahman ◽  
...  

2019 ◽  
Vol 773 ◽  
pp. 997-1008 ◽  
Author(s):  
Mohamad Firdaus Mohamad Noh ◽  
Nurul Affiqah Arzaee ◽  
Javad Safaei ◽  
Nurul Aida Mohamed ◽  
Hyeong Pil Kim ◽  
...  

2009 ◽  
Vol 517 (10) ◽  
pp. 3061-3065 ◽  
Author(s):  
D.W. Sheel ◽  
H.M. Yates ◽  
P. Evans ◽  
U. Dagkaldiran ◽  
A. Gordijn ◽  
...  

2007 ◽  
Vol 989 ◽  
Author(s):  
Hongbo Li ◽  
Ronald H.J. Franken ◽  
Robert L. Stolk ◽  
C. H.M. van der Werf ◽  
Jan-Willem A. Schuttauf ◽  
...  

AbstractThe influence of the surface roughness of Ag/ZnO coated substrates on the AM1.5 J-V characteristics of microcrystalline silicon (μc-Si:H) solar cells with an i-layer made by the hot-wire chemical vapour deposition (HWCVD) technique is discussed. Cells deposited on substrates with an intermediate rms roughness show the highest efficiency. When using reverse hydrogen profiling during i-layer deposition, an efficiency of 8.5 % was reached for single junction μc-Si:H n-i-p cells, which is the highest for μc-Si:H n-i-p cells with a hot-wire i-layer.


2015 ◽  
Vol 2015 ◽  
pp. 1-1
Author(s):  
K. Sharma ◽  
B. L. Williams ◽  
A. Mittal ◽  
H. C. M. Knoops ◽  
B. J. Kniknie ◽  
...  

2009 ◽  
Vol 517 (12) ◽  
pp. 3575-3577 ◽  
Author(s):  
Fernando Villar ◽  
Aldrin Antony ◽  
Jordi Escarré ◽  
Daniel Ibarz ◽  
Rubén Roldán ◽  
...  

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